component
STF9NK90Z
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STF9NK90Z
STMicroelectronics · MOSFETs · TO-220FP
STF9NK90Z from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the Zener-protected N-channel MOSFET, with gate-source voltage rated at ±30 V (page 2). |
| 2 | D | passive | Drain terminal (also connected to the TAB heat sink), rated for 900 V drain-source voltage and 8 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal, rated for 8 A source-drain continuous current and 32 A pulsed current (page 4). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 900 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) | ID | 8 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) | ID | 5 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 32 | A | 2 | |||
| Total power dissipation | PTOT | 40 | W | TC = 25 °C | 2 | ||
| Gate-source ESD (human body model) | ESD | 4 | kV | C = 100 pF, R = 1.5 kΩ | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | 2 | |||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | from all three leads to external heat sink, t = 1 s, TC = 25 °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 3.1 | °C/W | TO-220FP column (value alignment to verify) | 2 | ||
| Thermal resistance, junction-to-ambient | RthJA | 62.5 | °C/W | TO-220FP column (value alignment to verify) | 2 | ||
| Avalanche current, repetitive or not repetitive | IAR | 8 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 300 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 900 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 900 V | 3 | ||
| Zero gate voltage drain current | IDSS | 50 | µA | VGS = 0 V, VDS = 900 V, TC = 125 °C | 3 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 1.1 | 1.3 | Ω | VGS = 10 V, ID = 3.6 A | 3 | |
| Source-drain current | ISD | 8 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 32 | A | 4 | |||
| Forward on voltage | VSD | 1.6 | V | ISD = 8 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
STF9NK90Z - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
884acec45bef64bf, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STF9NK90Z
**STMicroelectronics** · MOSFETs · TO-220FP
STF9NK90Z from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the Zener-protected N-channel MOSFET, with gate-source voltage rated at ±30 V (page 2). |
| 2 | D | passive | Drain terminal (also connected to the TAB heat sink), rated for 900 V drain-source voltage and 8 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal, rated for 8 A source-drain continuous current and 32 A pulsed current (page 4). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 900 | V | | 2 |
| Gate-source voltage | VGS | -30 | | 30 | V | | 2 |
| Drain current (continuous) | ID | | | 8 | A | TC = 25 °C | 2 |
| Drain current (continuous) | ID | | | 5 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM | | | 32 | A | | 2 |
| Total power dissipation | PTOT | | | 40 | W | TC = 25 °C | 2 |
| Gate-source ESD (human body model) | ESD | | | 4 | kV | C = 100 pF, R = 1.5 kΩ | 2 |
| Peak diode recovery voltage slope | dv/dt | | | 4.5 | V/ns | | 2 |
| Insulation withstand voltage (RMS) | VISO | | | 2.5 | kV | from all three leads to external heat sink, t = 1 s, TC = 25 °C | 2 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |
| Thermal resistance, junction-to-case | RthJC | | | 3.1 | °C/W | TO-220FP column (value alignment to verify) | 2 |
| Thermal resistance, junction-to-ambient | RthJA | | | 62.5 | °C/W | TO-220FP column (value alignment to verify) | 2 |
| Avalanche current, repetitive or not repetitive | IAR | | | 8 | A | pulse width limited by TJ max. | 2 |
| Single pulse avalanche energy | EAS | | | 300 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 900 | | | V | ID = 1 mA, VGS = 0 V | 3 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 900 V | 3 |
| Zero gate voltage drain current | IDSS | | | 50 | µA | VGS = 0 V, VDS = 900 V, TC = 125 °C | 3 |
| Gate body leakage current | IGSS | -10 | | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | | 1.1 | 1.3 | Ω | VGS = 10 V, ID = 3.6 A | 3 |
| Source-drain current | ISD | | | 8 | A | | 4 |
| Source-drain current (pulsed) | ISDM | | | 32 | A | | 4 |
| Forward on voltage | VSD | | | 1.6 | V | ISD = 8 A, VGS = 0 V | 4 |
## CAD (KiCad official)
- Symbol: `STF9NK90Z`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf9nk90z.pdf) (22 pp, sha256 `884acec45bef64bf`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stf9nk90z-datasheet.pdf)