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STF9NK90Z

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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STF9NK90Z

STMicroelectronics · MOSFETs · TO-220FP

STF9NK90Z from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the Zener-protected N-channel MOSFET, with gate-source voltage rated at ±30 V (page 2).
2 D passive Drain terminal (also connected to the TAB heat sink), rated for 900 V drain-source voltage and 8 A continuous drain current at TC = 25 °C.
3 S passive Source terminal, rated for 8 A source-drain continuous current and 32 A pulsed current (page 4).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 900 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 8 A TC = 25 °C 2
Drain current (continuous) ID 5 A TC = 100 °C 2
Drain current (pulsed) IDM 32 A 2
Total power dissipation PTOT 40 W TC = 25 °C 2
Gate-source ESD (human body model) ESD 4 kV C = 100 pF, R = 1.5 kΩ 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns 2
Insulation withstand voltage (RMS) VISO 2.5 kV from all three leads to external heat sink, t = 1 s, TC = 25 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-to-case RthJC 3.1 °C/W TO-220FP column (value alignment to verify) 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W TO-220FP column (value alignment to verify) 2
Avalanche current, repetitive or not repetitive IAR 8 A pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 300 mJ starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 900 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 900 V 3
Zero gate voltage drain current IDSS 50 µA VGS = 0 V, VDS = 900 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 100 µA 3
Static drain-source on-resistance RDS(on) 1.1 1.3 Ω VGS = 10 V, ID = 3.6 A 3
Source-drain current ISD 8 A 4
Source-drain current (pulsed) ISDM 32 A 4
Forward on voltage VSD 1.6 V ISD = 8 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STF9NK90Z
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (22 pp, sha256 884acec45bef64bf, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF