# STF26NM60N

**STMicroelectronics** · MOSFETs · TO-220FP

STF26NM60N from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates gate-source voltage VGS at ±30 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDS at 600 V and continuous drain current ID at 20 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; the datasheet gives source-drain diode continuous current ISD of 20 A and forward voltage VSD of 1.5 V at ISD = 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 600 | V |  | 3 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 20 | A | TC = 25 °C; limited by package | 3 |
| Drain current (continuous) | ID |  |  | 12.6 | A | TC = 100 °C; limited by package | 3 |
| Drain current (pulsed) | IDM |  |  | 80 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 35 | W | TC = 25 °C | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 15 | V/ns | ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD ≤ 80% V(BR)DSS | 3 |
| Insulation withstand voltage (RMS) | VISO |  |  | 2500 | V | From all three leads to external heat sink; t = 1 s; TC = 25 °C | 3 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal resistance junction-case | Rthj-case |  | 3.6 |  | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  | 62.5 |  | °C/W |  | 3 |
| Single pulse avalanche current | IAS |  |  | 6 | A | Pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS |  |  | 610 | mJ | Starting TJ=25 °C, ID=IAR, VDD=50 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 1 mA, VGS = 0 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 4 |
| Gate-body leakage current | IGSS | -0.1 |  | 0.1 | µA | VDS = 0 V, VGS = ±25 V | 4 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 0.135 | 0.165 | Ω | VGS = 10 V, ID = 10 A | 4 |
| Source-drain current | ISD |  |  | 20 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 80 | A | Pulse width limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.5 | V | ISD = 20 A, VGS = 0 V; pulsed | 5 |

## CAD (KiCad official)

- Symbol: `STF26NM60N`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf26nm60n.pdf) (13 pp, sha256 `98e855b629c1b328`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf26nm60n-datasheet.pdf)