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STF26NM60N

STMicroelectronics · MOSFETs · TO-220FP

STF26NM60N from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; the datasheet rates gate-source voltage VGS at ±30 V.
2	D	passive	Drain terminal; the datasheet rates drain-source voltage VDS at 600 V and continuous drain current ID at 20 A at TC = 25 °C.
3	S	passive	Source terminal; the datasheet gives source-drain diode continuous current ISD of 20 A and forward voltage VSD of 1.5 V at ISD = 20 A.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220FP
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			600	V		3
Gate-source voltage	VGS	-30		30	V		3
Drain current (continuous)	ID			20	A	TC = 25 °C; limited by package	3
Drain current (continuous)	ID			12.6	A	TC = 100 °C; limited by package	3
Drain current (pulsed)	IDM			80	A	Pulse width limited by safe operating area	3
Total dissipation	PTOT			35	W	TC = 25 °C	3
Peak diode recovery voltage slope	dv/dt			15	V/ns	ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD ≤ 80% V(BR)DSS	3
Insulation withstand voltage (RMS)	VISO			2500	V	From all three leads to external heat sink; t = 1 s; TC = 25 °C	3
Storage temperature range	Tstg	-55		150	°C		3
Thermal resistance junction-case	Rthj-case		3.6		°C/W		3
Thermal resistance junction-ambient	Rthj-amb		62.5		°C/W		3
Single pulse avalanche current	IAS			6	A	Pulse width limited by Tjmax	3
Single pulse avalanche energy	EAS			610	mJ	Starting TJ=25 °C, ID=IAR, VDD=50 V	3
Drain-source breakdown voltage	V(BR)DSS	600			V	ID = 1 mA, VGS = 0 V	4
Zero gate voltage drain current	IDSS			1	µA	VGS = 0 V, VDS = 600 V	4
Zero gate voltage drain current	IDSS			100	µA	VGS = 0 V, VDS = 600 V, TC = 125 °C	4
Gate-body leakage current	IGSS	-0.1		0.1	µA	VDS = 0 V, VGS = ±25 V	4
Gate threshold voltage	VGS(th)	2	3	4	V	VDS = VGS, ID = 250 µA	4
Static drain-source on-resistance	RDS(on)		0.135	0.165	Ω	VGS = 10 V, ID = 10 A	4
Source-drain current	ISD			20	A		5
Source-drain current (pulsed)	ISDM			80	A	Pulse width limited by safe operating area	5
Forward on voltage	VSD			1.5	V	ISD = 20 A, VGS = 0 V; pulsed	5

CAD (KiCad official)

Symbol: STF26NM60N
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (13 pp, sha256 98e855b629c1b328, retrieved 2026-10-27, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF