# STF18N60M2

**STMicroelectronics** · MOSFETs · TO-220FP

STF18N60M2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the device is Zener-protected and VGS is rated ±25 V (Table 1). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; V(BR)DSS is 600 V minimum and continuous drain current is 13 A at TC = 25 °C (Tables 1 and 4). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the source-drain diode is rated 13 A continuous and 52 A pulsed (Table 7). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 2 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 13 | A | TC = 25 °C | 2 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 8 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 52 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation | PTOT |  |  | 25 | W | TC = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt |  |  | 15 | V/ns | ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDD = 400 V | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS ≤ 480 V | 2 |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO |  |  | 2.5 | kV | t = 1 s; TC = 25 °C | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal resistance junction-case | Rthj-case |  |  | 5 | °C/W |  | 2 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 2 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 3 | A | Pulse width limited by Tjmax | 2 |
| Single pulse avalanche energy | EAS |  |  | 135 | mJ | Starting Tj=25 °C, ID= IAR, VDD=50 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 1 mA, VGS = 0 V | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |
| Zero gate voltage drain current at TC = 125 °C | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (1) | 3 |
| Gate-body leakage current | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ± 25 V | 3 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 0.255 | 0.28 | Ω | VGS = 10 V, ID = 6.5 A | 3 |
| Source-drain current | ISD |  |  | 13 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 52 | A |  | 4 |
| Forward on voltage | VSD |  |  | 1.6 | V | ISD = 13 A, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `STF18N60M2`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf18n60m2.pdf) (12 pp, sha256 `110f1df2ce6c1d07`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf18n60m2-datasheet.pdf)