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STF18N60M2

STMicroelectronics · MOSFETs · TO-220FP

STF18N60M2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the device is Zener-protected and VGS is rated ±25 V (Table 1).
2 D passive Drain terminal of the N-channel MOSFET; V(BR)DSS is 600 V minimum and continuous drain current is 13 A at TC = 25 °C (Tables 1 and 4).
3 S passive Source terminal of the N-channel MOSFET; the source-drain diode is rated 13 A continuous and 52 A pulsed (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) at TC = 25 °C ID 13 A TC = 25 °C 2
Drain current (continuous) at TC = 100 °C ID 8 A TC = 100 °C 2
Drain current (pulsed) IDM 52 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 25 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDD = 400 V 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS ≤ 480 V 2
Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 2.5 kV t = 1 s; TC = 25 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance junction-case Rthj-case 5 °C/W 2
Thermal resistance junction-ambient Rthj-amb 62.5 °C/W 2
Avalanche current, repetitive or not repetitive IAR 3 A Pulse width limited by Tjmax 2
Single pulse avalanche energy EAS 135 mJ Starting Tj=25 °C, ID= IAR, VDD=50 V 2
Drain-source breakdown voltage V(BR)DSS 600 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 100 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 3
Gate-body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ± 25 V 3
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 0.255 0.28 Ω VGS = 10 V, ID = 6.5 A 3
Source-drain current ISD 13 A 4
Source-drain current (pulsed) ISDM 52 A 4
Forward on voltage VSD 1.6 V ISD = 13 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STF18N60M2
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 110f1df2ce6c1d07, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF