component
STF15N95K5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STF15N95K5
STMicroelectronics · MOSFETs · TO-220FP
STF15N95K5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±30 V (Table 2) and back-to-back Zener diodes protect the gate from ESD and voltage transients. |
| 2 | D | passive | Drain terminal; drain-source breakdown voltage V(BR)DSS is 950 V and continuous drain current is 12 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; source-drain forward voltage is 1.5 V at ISD = 12 A with VGS = 0 (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 | 30 | V | 3 | ||
| Drain current (continuous) at TC = 25 °C | ID | 12 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) at TC = 100 °C | ID | 7.6 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 48 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation at TC = 25 °C | PTOT | 30 | W | TC = 25 °C | 3 | ||
| Max current during repetitive or single pulse avalanche | IAR | 4 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 124 | mJ | Starting TJ = 25 °C, ID=IAS, VDD= 50 V | 3 | ||
| Gate-source human body model ESD | ESD | 2 | kV | R= 1.5 kΩ, C = 100 pF | 3 | ||
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO | 2500 | V | t=1 s; TC=25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS ≤ 760 V | 3 | ||
| Storage temperature (Tj, Tstg range) | Tstg | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-amb max (TO-220FP) | Rthj-amb | 62.5 | °C/W | 3 | |||
| Static drain-source on-resistance | RDS(on) | 0.41 | 0.5 | Ω | VGS = 10 V, ID= 6 A | 4 | |
| Gate body leakage current | IGSS | -10 | 10 | μA | VDS = 0, VGS = ± 20 V | 4 | |
| Gate-source breakdown voltage | V(BR)GSO | 30 | V | IGS= ± 1 mA, ID= 0 | 5 |
CAD (KiCad official)
- Symbol:
STF15N95K5 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (18 pp, sha256
081f96825f27d567, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).