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Contents

README

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STF15N95K5

STMicroelectronics · MOSFETs · TO-220FP

STF15N95K5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is limited to ±30 V (Table 2) and back-to-back Zener diodes protect the gate from ESD and voltage transients.
2 D passive Drain terminal; drain-source breakdown voltage V(BR)DSS is 950 V and continuous drain current is 12 A at TC = 25 °C.
3 S passive Source terminal; source-drain forward voltage is 1.5 V at ISD = 12 A with VGS = 0 (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -30 30 V 3
Drain current (continuous) at TC = 25 °C ID 12 A TC = 25 °C 3
Drain current (continuous) at TC = 100 °C ID 7.6 A TC = 100 °C 3
Drain current (pulsed) IDM 48 A Pulse width limited by safe operating area 3
Total dissipation at TC = 25 °C PTOT 30 W TC = 25 °C 3
Max current during repetitive or single pulse avalanche IAR 4 A Pulse width limited by Tjmax 3
Single pulse avalanche energy EAS 124 mJ Starting TJ = 25 °C, ID=IAS, VDD= 50 V 3
Gate-source human body model ESD ESD 2 kV R= 1.5 kΩ, C = 100 pF 3
Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 2500 V t=1 s; TC=25 °C 3
Peak diode recovery voltage slope dv/dt 4.5 V/ns ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS ≤ 760 V 3
Storage temperature (Tj, Tstg range) Tstg -55 150 °C 3
Thermal resistance junction-amb max (TO-220FP) Rthj-amb 62.5 °C/W 3
Static drain-source on-resistance RDS(on) 0.41 0.5 Ω VGS = 10 V, ID= 6 A 4
Gate body leakage current IGSS -10 10 μA VDS = 0, VGS = ± 20 V 4
Gate-source breakdown voltage V(BR)GSO 30 V IGS= ± 1 mA, ID= 0 5

CAD (KiCad official)

  • Symbol: STF15N95K5
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 081f96825f27d567, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF