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stf15n95k5: factory component page (tier=mfr)

Ray ·214caca282 ·13d ago ·parent 93c6b76
1 file changed +246−26
page.json+246−26
@@ -1,8 +1,11 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "stf15n95k5",+  "title": "STF15N95K5",+  "brief": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",@@ -10,26 +13,6 @@     "factory-2.0.0",     "extractor-text"   ],-  "dependencies": {},-  "hero": {-    "type": "image",-    "path": "docs/hero.png"-  },-  "files": [-    "page.json",-    "README.md",-    "stf15n95k5.kicad_sym",-    "stf15n95k5.kicad_mod",-    "stf15n95k5.glb",-    "stf15n95k5.step",-    "stf15n95k5.lbr",-    "docs/hero.png",-    "docs/stf15n95k5-datasheet.pdf",-    "viewers/symbol.html",-    "viewers/footprint.html",-    "stf15n95k5-hero.glb",-    "stf15n95k5-hero.overlay.json"-  ],   "component": {     "mpn": "STF15N95K5",     "manufacturer": "STMicroelectronics",@@ -140,10 +123,247 @@       }     ]   },-  "visibility": "public",-  "org": "adom",+  "metadata": {+    "specs": {+      "Manufacturer": "STMicroelectronics",+      "Package": "TO-220FP",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "081f96825f27d56765d29b5f0f4458b9b479d2fe0d3c202a8d33c0ef12e073c3",+      "rows": [+        {+          "name": "Gate-source voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current (continuous) at TC = 25 °C",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 12,+          "conditions": "TC = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current (continuous) at TC = 100 °C",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 7.6,+          "conditions": "TC = 100 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Drain current (pulsed)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 48,+          "conditions": "Pulse width limited by safe operating area",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Total dissipation at TC = 25 °C",+          "symbol": "PTOT",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "TC = 25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Max current during repetitive or single pulse avalanche",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 4,+          "conditions": "Pulse width limited by Tjmax",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 124,+          "conditions": "Starting TJ = 25 °C, ID=IAS, VDD= 50 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Gate-source human body model ESD",+          "symbol": "ESD",+          "kind": "absolute_maximum",+          "unit": "kV",+          "min": null,+          "typ": null,+          "max": 2,+          "conditions": "R= 1.5 kΩ, C = 100 pF",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Insulation withstand voltage (RMS) from all three leads to external heat sink",+          "symbol": "VISO",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 2500,+          "conditions": "t=1 s; TC=25 °C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Peak diode recovery voltage slope",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "MOSFET dv/dt ruggedness",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS ≤ 760 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature (Tj, Tstg range)",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal resistance junction-amb max (TO-220FP)",+          "symbol": "Rthj-amb",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Static drain-source on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 0.41,+          "max": 0.5,+          "conditions": "VGS = 10 V, ID= 6 A",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate body leakage current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "μA",+          "min": -10,+          "typ": null,+          "max": 10,+          "conditions": "VDS = 0, VGS = ± 20 V",+          "source_page": 4,+          "source": "datasheet"+        },+        {+          "name": "Gate-source breakdown voltage",+          "symbol": "V(BR)GSO",+          "kind": "electrical",+          "unit": "V",+          "min": 30,+          "typ": null,+          "max": null,+          "conditions": "IGS= ± 1 mA, ID= 0",+          "source_page": 5,+          "source": "datasheet"+        }+      ]+    }+  },+  "variants": [],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "stf15n95k5"+  ],+  "discovery_pitch": "STF15N95K5 (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",   "author": {     "name": "Ray",     "email": "[email protected]"-  }-}\ No newline at end of file+  },+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "stf15n95k5.kicad_sym",+    "stf15n95k5.kicad_mod",+    "stf15n95k5.glb",+    "stf15n95k5.step",+    "stf15n95k5.lbr",+    "docs/hero.png",+    "docs/stf15n95k5-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "stf15n95k5-hero.glb",+    "stf15n95k5-hero.overlay.json"+  ]+}