# STF15N65M5

**STMicroelectronics** · MOSFETs · TO-220FP

STF15N65M5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±25 V and a threshold of 3 V min, 4 V typ, 5 V max at ID = 250 µA. |
| 2 | D | passive | Drain; V(BR)DSS is 650 V min, continuous current is 11 A at TC = 25 °C, and in the TO-220FP the tab is not a separate pin. |
| 3 | S | passive | Source; carries the source-drain diode current ISD of 11 A continuous and 44 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 3 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 11 | A | TC = 25 °C; limited by maximum junction temperature | 3 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 6.9 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 44 | A |  | 3 |
| Total dissipation at TC = 25 °C (TO-220FP) | PTOT |  |  | 25 | W | TC = 25 °C | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS | 3 |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO |  |  | 2500 | V | t = 1 s; TC = 25 °C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Max. operating junction temperature | Tj |  |  | 150 | °C |  | 3 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 2.5 | A | pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS |  |  | 160 | mJ | starting Tj = 25 °C, ID = IAR; VDD = 50 V | 3 |
| Thermal resistance junction-case (TO-220FP) | Rthj-case |  |  | 5 | °C/W | max | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W | max | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 650 |  |  | V | ID = 1 mA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0, VDS = 650 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | µA | VGS = 0, VDS = 650 V, TC = 125 °C | 4 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0, VGS = ± 25 V | 4 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 0.308 | 0.34 | Ω | VGS = 10 V, ID = 5.5 A | 4 |
| Source-drain current | ISD |  |  | 11 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 44 | A | pulse width limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.5 | V | ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 µs, duty cycle 1.5% | 5 |

## CAD (KiCad official)

- Symbol: `STF15N65M5`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf15n65m5.pdf) (17 pp, sha256 `c630dc965e755945`, retrieved 2026-11-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf15n65m5-datasheet.pdf)