component
STF15N65M5
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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTF15N65M5
STMicroelectronics · MOSFETs · TO-220FP
STF15N65M5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±25 V and a threshold of 3 V min, 4 V typ, 5 V max at ID = 250 µA. |
| 2 | D | passive | Drain; V(BR)DSS is 650 V min, continuous current is 11 A at TC = 25 °C, and in the TO-220FP the tab is not a separate pin. |
| 3 | S | passive | Source; carries the source-drain diode current ISD of 11 A continuous and 44 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 | 25 | V | 3 | ||
| Drain current (continuous) at TC = 25 °C | ID | 11 | A | TC = 25 °C; limited by maximum junction temperature | 3 | ||
| Drain current (continuous) at TC = 100 °C | ID | 6.9 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 44 | A | 3 | |||
| Total dissipation at TC = 25 °C (TO-220FP) | PTOT | 25 | W | TC = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS | 3 | ||
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO | 2500 | V | t = 1 s; TC = 25 °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Max. operating junction temperature | Tj | 150 | °C | 3 | |||
| Avalanche current, repetitive or not repetitive | IAR | 2.5 | A | pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 160 | mJ | starting Tj = 25 °C, ID = IAR; VDD = 50 V | 3 | ||
| Thermal resistance junction-case (TO-220FP) | Rthj-case | 5 | °C/W | max | 3 | ||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | max | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | ID = 1 mA, VGS = 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0, VDS = 650 V | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VGS = 0, VDS = 650 V, TC = 125 °C | 4 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0, VGS = ± 25 V | 4 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 0.308 | 0.34 | Ω | VGS = 10 V, ID = 5.5 A | 4 | |
| Source-drain current | ISD | 11 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 44 | A | pulse width limited by safe operating area | 5 | ||
| Forward on voltage | VSD | 1.5 | V | ISD = 11 A, VGS = 0; pulsed: pulse duration = 300 µs, duty cycle 1.5% | 5 |
CAD (KiCad official)
- Symbol:
STF15N65M5 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
c630dc965e755945, retrieved 2026-11-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).