# STF100N6F7

**STMicroelectronics** · MOSFETs · TO-220-3

STF100N6F7 from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage up to 60 V, continuous current 46 A limited by package at TC = 25 °C. |
| 3 | S | passive | Source; connects to the body diode anode, with forward diode current ISD of 46 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | VGS = 0 V, ID = 1 mA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 60 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = 20 V | 4 |
| Gate threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 4.6 | 5.6 | mΩ | VGS = 10 V, ID = 23 A | 4 |
| Drain-source voltage | VDS |  |  | 60 | V |  | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 46 | A | TC = 25 °C; limited by package | 3 |
| Drain current (continuous) | ID |  |  | 33 | A | TC = 100 °C; limited by package | 3 |
| Drain current (pulsed) | IDM |  |  | 184 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 25 | W | TC = 25 °C | 3 |
| Single pulse avalanche energy | EAS |  |  | 200 | mJ | Starting TJ = 25 °C, ID = 20 A, VDD = 30 V | 3 |
| Drain-body diode dynamic dV/dt ruggedness | dV/dt |  |  | 6 | V/ns | ISD = 46 A; di/dt = 600 A/µs; VDD = 48 V; Tj < Tjmax | 3 |
| Insulation withstand voltage (RMS) | VISO |  |  | 2500 | V | From all three leads to external heat sink; t = 1 s; TC = 25 °C | 3 |
| Operating junction temperature | Tj | -55 |  | 175 | °C |  | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 6 | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `STF100N6F7`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `stf100n6f7-etched.step` / `stf100n6f7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stf100n6f7.step` / `stf100n6f7.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602748204450390016) (13 pp, sha256 `670cbea01ac8902f`, retrieved 2026-10-11, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf100n6f7-datasheet.pdf)