component
STF100N6F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 28d ago |
| viewers | 28d ago |
| package.json | 28d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| stf100n6f7-etched.glb | 28d ago |
| stf100n6f7-etched.step | 28d ago |
| stf100n6f7-hero.glb | 28d ago |
| stf100n6f7-hero.overlay.json | 28d ago |
| stf100n6f7.glb | 28d ago |
| stf100n6f7.kicad_mod | 28d ago |
| stf100n6f7.kicad_sym | 28d ago |
| stf100n6f7.lbr | 28d ago |
| stf100n6f7.step | 28d ago |
STF100N6F7
STMicroelectronics · MOSFETs · TO-220-3
STF100N6F7 from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage up to 60 V, continuous current 46 A limited by package at TC = 25 °C. |
| 3 | S | passive | Source; connects to the body diode anode, with forward diode current ISD of 46 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 60 V | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VDS = 0 V, VGS = 20 V | 4 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 4 | |
| Static drain-source on-resistance | RDS(on) | 4.6 | 5.6 | mΩ | VGS = 10 V, ID = 23 A | 4 | |
| Drain-source voltage | VDS | 60 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) | ID | 46 | A | TC = 25 °C; limited by package | 3 | ||
| Drain current (continuous) | ID | 33 | A | TC = 100 °C; limited by package | 3 | ||
| Drain current (pulsed) | IDM | 184 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 25 | W | TC = 25 °C | 3 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | Starting TJ = 25 °C, ID = 20 A, VDD = 30 V | 3 | ||
| Drain-body diode dynamic dV/dt ruggedness | dV/dt | 6 | V/ns | ISD = 46 A; di/dt = 600 A/µs; VDD = 48 V; Tj < Tjmax | 3 | ||
| Insulation withstand voltage (RMS) | VISO | 2500 | V | From all three leads to external heat sink; t = 1 s; TC = 25 °C | 3 | ||
| Operating junction temperature | Tj | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 6 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
STF100N6F7 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
stf100n6f7-etched.step/stf100n6f7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stf100n6f7.step/stf100n6f7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
670cbea01ac8902f, retrieved 2026-10-11, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).