STD9N65M2

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  "slug": "std9n65m2",
  "title": "STD9N65M2",
  "brief": "STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "STD9N65M2",
    "manufacturer": "STMicroelectronics",
    "package": "DPAK",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.st.com/resource/en/datasheet/std9n65m2.pdf",
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    "distributor_links": {
      "lcsc": "C3277868",
      "digikey": "497-15051-2-ND",
      "mouser": "511-STD9N65M2"
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal; the gate-source voltage is limited to ±25 V (absolute maximum rating)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the tab; continuous drain current is 5 A at TC = 25 °C with a minimum drain-source breakdown voltage of 650 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal; the source-drain diode is rated for 5 A continuous and 20 A pulsed source-drain current."
      }
    ],
    "provenance": {
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        "primary_mode": "text",
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "pages_sent": 28,
        "cost_usd": 0.051,
        "at": "2026-10-09T19:37:23"
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      "datasheet": {
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        "pages": 28,
        "sha256": "a66a6196d685cbf0",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
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        "refuses_to_fabricate": true
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          6.5,
          2.32
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-09",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "DPAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "a66a6196d685cbf0",
      "rows": [
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -25,
          "typ": null,
          "max": 25,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 25 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 100 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 3.2,
          "conditions": "TC = 100 °C",
          "source_page": 2,
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        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "",
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        },
        {
          "name": "Total power dissipation at TC = 25 °C",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt(3)",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "ISD ≤ 5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt(4)",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS ≤ 520 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature range",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Operating junction temperature range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Avalanche current, repetitive or not repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "pulse width limited by TJ max",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 105,
          "conditions": "starting TJ = 25 °C, ID = IAR; VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction-case",
          "symbol": "Rthj-case",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 2.08,
          "conditions": "DPAK",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction-pcb",
          "symbol": "Rthj-pcb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction-ambient",
          "symbol": "Rthj-amb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 62.5,
          "conditions": "When mounted on 1 inch2 FR-4, 2 Oz copper board",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 1 mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0 V, VDS = 650 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS = 0 V, VDS = 650 V, TC = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 0 V, VGS = ±25 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS = VGS, ID = 250 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 0.79,
          "max": 0.9,
          "conditions": "VGS = 10 V, ID = 2.5 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current",
          "symbol": "ISD",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current (pulsed)",
          "symbol": "ISDM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Forward on voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.6,
          "conditions": "ISD = 5 A, VGS = 0 V",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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