component

STD96N3LLH6

Public Made by Adom

by adom

STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd96n3llh6factory-2.0.0extractor-text
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STD96N3LLH6

STMicroelectronics · MOSFETs · DPAK

STD96N3LLH6 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel STripFET VI DeepGATE MOSFET, with gate-source voltage rated at ±20 V (VGS absolute maximum).
2 D passive Drain, which is also connected to the metal tab; drain-source voltage is rated at 30 V (VDS with VGS = 0) and continuous drain current at TC = 25 °C is 80 A.
3 S passive Source of the MOSFET; the datasheet specifies source-drain diode current ISD of 80 A maximum and pulsed ISDM of 320 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STD96N3LLH6
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std96n3llh6-etched.step / std96n3llh6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std96n3llh6.step / std96n3llh6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 eb4232bc033a1ddf, retrieved 2026-10-08, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF