component
STD96N3LLH6
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTD96N3LLH6
STMicroelectronics · MOSFETs · DPAK
STD96N3LLH6 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel STripFET VI DeepGATE MOSFET, with gate-source voltage rated at ±20 V (VGS absolute maximum). |
| 2 | D | passive | Drain, which is also connected to the metal tab; drain-source voltage is rated at 30 V (VDS with VGS = 0) and continuous drain current at TC = 25 °C is 80 A. |
| 3 | S | passive | Source of the MOSFET; the datasheet specifies source-drain diode current ISD of 80 A maximum and pulsed ISDM of 320 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STD96N3LLH6 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
std96n3llh6-etched.step/std96n3llh6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std96n3llh6.step/std96n3llh6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
eb4232bc033a1ddf, retrieved 2026-10-08, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).