STD8N80K5

STMicroelectronics · MOSFETs · TO-252-2(DPAK)

STD8N80K5 from STMicroelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±30 V (Table 2), and built-in back-to-back Zener diodes protect the gate with a gate-source breakdown of 30 V minimum (Table 8).
2	D	passive	Drain terminal, also connected to the metal tab (printed as D(2,TAB)); rated for 800 V drain-source breakdown minimum with a continuous drain current of 6 A at TC = 25 °C (Tables 2 and 4).
3	S	passive	Source terminal and gate-drive reference; source-drain diode forward voltage is 1.5 V typical at ISD = 6 A, VGS = 0 (Table 7).

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-252-2(DPAK)
Category	Transistors/Thyristors
Pins	3

CAD (KiCad official)

Symbol: STD8N80K5
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
3D model files: std8n80k5-etched.step / std8n80k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std8n80k5.step / std8n80k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (17 pp, sha256 c85af00929e33a34, retrieved 2026-10-08, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# STD8N80K5

**STMicroelectronics** · MOSFETs · TO-252-2(DPAK)

STD8N80K5 from STMicroelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±30 V (Table 2), and built-in back-to-back Zener diodes protect the gate with a gate-source breakdown of 30 V minimum (Table 8). |
| 2 | D | passive | Drain terminal, also connected to the metal tab (printed as D(2,TAB)); rated for 800 V drain-source breakdown minimum with a continuous drain current of 6 A at TC = 25 °C (Tables 2 and 4). |
| 3 | S | passive | Source terminal and gate-drive reference; source-drain diode forward voltage is 1.5 V typical at ISD = 6 A, VGS = 0 (Table 7). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STD8N80K5`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `std8n80k5-etched.step` / `std8n80k5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std8n80k5.step` / `std8n80k5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586204711934971904) (17 pp, sha256 `c85af00929e33a34`, retrieved 2026-10-08, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std8n80k5-datasheet.pdf)