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STD8N80K5

STMicroelectronics · MOSFETs · TO-252-2(DPAK)

STD8N80K5 from STMicroelectronics, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±30 V (Table 2), and built-in back-to-back Zener diodes protect the gate with a gate-source breakdown of 30 V minimum (Table 8).
2 D passive Drain terminal, also connected to the metal tab (printed as D(2,TAB)); rated for 800 V drain-source breakdown minimum with a continuous drain current of 6 A at TC = 25 °C (Tables 2 and 4).
3 S passive Source terminal and gate-drive reference; source-drain diode forward voltage is 1.5 V typical at ISD = 6 A, VGS = 0 (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STD8N80K5
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: std8n80k5-etched.step / std8n80k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std8n80k5.step / std8n80k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 c85af00929e33a34, retrieved 2026-10-08, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF