# STD80N10F7

**STMicroelectronics** · MOSFETs · DPAK

STD80N10F7 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal of the N-channel power MOSFET. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, internally connected to the package tab. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | ID = 250 μA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS = 100 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | μA | VDS = 100 V, TC = 125 °C | 4 |
| Gate-body leakage current | IGSS |  |  | 100 | μA | VDS = 0, VGS = 20 V | 4 |
| Gate threshold voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | VDS = VGS, ID = 250 μA | 4 |
| Static drain-source on-resistance (DPAK) | RDS(on) |  | 0.0085 | 0.01 | Ω | for DPAK, TO-220 and TO-220FP: ID = 40 A, VGS = 10 V | 4 |
| Source-drain current | ISD |  |  | 80 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 320 | A |  | 5 |
| Forward on voltage | VSD |  |  | 1.1 | V | ISD = 80 A, VGS = 0 | 5 |
| Drain-source voltage | VDS |  |  | 100 | V |  | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 70 | A | TC = 25 °C | 3 |
| Drain current (continuous) | ID |  |  | 48 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 280 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 85 | W | TC = 25 °C | 3 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 3 |
| Thermal resistance junction-pcb | Rthj-pcb |  |  | 50 | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 1.76 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `STD80N10F7`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std80n10f7-etched.step` / `std80n10f7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std80n10f7.step` / `std80n10f7.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std80n10f7.pdf) (25 pp, sha256 `ebc9471d684815a5`, retrieved 2026-09-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std80n10f7-datasheet.pdf)