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docs std80n10f7: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 23d ago
viewers std80n10f7: viewers · Ray 1mo ago
package.json std80n10f7: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 23d ago
page.json std80n10f7: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 23d ago
README.md std80n10f7: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 23d ago
std80n10f7-etched.fit.json std80n10f7: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
std80n10f7-etched.glb std80n10f7: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 23d ago
std80n10f7-etched.step std80n10f7: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 23d ago
std80n10f7.glb Publish 0.1.0 · Ray 1mo ago
std80n10f7.kicad_mod Publish 0.1.0 · Ray 1mo ago
std80n10f7.kicad_sym Publish 0.1.0 · Ray 1mo ago
std80n10f7.lbr Publish 0.1.0 · Ray 1mo ago
std80n10f7.step Publish 0.1.0 · Ray 1mo ago

STD80N10F7

STMicroelectronics · MOSFETs · DPAK

STD80N10F7 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control terminal of the N-channel power MOSFET.
2 D passive Drain terminal of the N-channel power MOSFET, internally connected to the package tab.
3 S passive Source terminal of the N-channel power MOSFET.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V ID = 250 μA, VGS = 0 4
Zero gate voltage drain current IDSS 1 μA VDS = 100 V 4
Zero gate voltage drain current IDSS 100 μA VDS = 100 V, TC = 125 °C 4
Gate-body leakage current IGSS 100 μA VDS = 0, VGS = 20 V 4
Gate threshold voltage VGS(th) 2.5 3.5 4.5 V VDS = VGS, ID = 250 μA 4
Static drain-source on-resistance (DPAK) RDS(on) 0.0085 0.01 Ω for DPAK, TO-220 and TO-220FP: ID = 40 A, VGS = 10 V 4
Source-drain current ISD 80 A 5
Source-drain current (pulsed) ISDM 320 A 5
Forward on voltage VSD 1.1 V ISD = 80 A, VGS = 0 5
Drain-source voltage VDS 100 V 3
Gate-source voltage VGS -20 20 V 3
Drain current (continuous) ID 70 A TC = 25 °C 3
Drain current (continuous) ID 48 A TC = 100 °C 3
Drain current (pulsed) IDM 280 A Pulse width limited by safe operating area 3
Total dissipation PTOT 85 W TC = 25 °C 3
Storage temperature Tstg -55 175 °C 3
Thermal resistance junction-pcb Rthj-pcb 50 °C/W 3
Thermal resistance junction-ambient Rthj-amb 62.5 °C/W 3
Thermal resistance junction-case Rthj-case 1.76 °C/W 3

CAD (KiCad official)

  • Symbol: STD80N10F7
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std80n10f7-etched.step / std80n10f7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std80n10f7.step / std80n10f7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (25 pp, sha256 ebc9471d684815a5, retrieved 2026-09-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF