component
STD80N10F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 1mo ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| std80n10f7-etched.fit.json | 1mo ago |
| std80n10f7-etched.glb | 23d ago |
| std80n10f7-etched.step | 23d ago |
| std80n10f7.glb | 1mo ago |
| std80n10f7.kicad_mod | 1mo ago |
| std80n10f7.kicad_sym | 1mo ago |
| std80n10f7.lbr | 1mo ago |
| std80n10f7.step | 1mo ago |
STD80N10F7
STMicroelectronics · MOSFETs · DPAK
STD80N10F7 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control terminal of the N-channel power MOSFET. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, internally connected to the package tab. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 250 μA, VGS = 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 100 V | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | μA | VDS = 100 V, TC = 125 °C | 4 | ||
| Gate-body leakage current | IGSS | 100 | μA | VDS = 0, VGS = 20 V | 4 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | VDS = VGS, ID = 250 μA | 4 |
| Static drain-source on-resistance (DPAK) | RDS(on) | 0.0085 | 0.01 | Ω | for DPAK, TO-220 and TO-220FP: ID = 40 A, VGS = 10 V | 4 | |
| Source-drain current | ISD | 80 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 320 | A | 5 | |||
| Forward on voltage | VSD | 1.1 | V | ISD = 80 A, VGS = 0 | 5 | ||
| Drain-source voltage | VDS | 100 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) | ID | 70 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) | ID | 48 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 280 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 85 | W | TC = 25 °C | 3 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-pcb | Rthj-pcb | 50 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Thermal resistance junction-case | Rthj-case | 1.76 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
STD80N10F7 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
std80n10f7-etched.step/std80n10f7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std80n10f7.step/std80n10f7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (25 pp, sha256
ebc9471d684815a5, retrieved 2026-09-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).