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STD7NM80T4-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STD7NM80T4-VB

VBsemi Elec · MOSFETs · TO-252

STD7NM80T4-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGS is limited to ±30 V per the absolute maximum ratings.
2 D passive Drain terminal of the 800 V N-channel super junction MOSFET; continuous drain current is 5.9 A at TC = 100 °C.
3 S passive Source terminal, the reference for gate drive and the integral body diode, with reverse diode dV/dt rated at 32 V/ns.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 800 V TC = 25 °C, unless otherwise noted 1
Gate-Source Voltage VGS -30 30 V TC = 25 °C, unless otherwise noted 1
Continuous Drain Current ID 5.9 A TJ = 150 °C; VGS at 10 V; TC = 100 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C TC = 25 °C, unless otherwise noted 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s; 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 72 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.7 °C/W 2
Drain-Source Breakdown Voltage VDS 800 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ±30 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 800 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Diode Forward Voltage VSD 1.4 V TJ = 25 °C, IS = 4 A, VGS = 0 V 2
VDS Temperature Coefficient ΔVDS/TJ -0.65 V/°C Reference to 25 °C, ID = 1 mA 2
Drain-Source On-State Resistance RDS(on) 0.85 Ω VGS = 10 V, ID = 4 A 2
Forward Transconductance gfs 9 S VDS = 30 V, ID = 4 A 2
Input Capacitance Ciss 73 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Gate Input Resistance Rg 3.5 Ω f = 1 MHz, open drain 2
Reverse Recovery Charge Qrr 2.4 μC TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V 2

CAD (KiCad official)

  • Symbol: STD7NM80T4-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: std7nm80t4-vb-etched.step / std7nm80t4-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std7nm80t4-vb.step / std7nm80t4-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 2f81d89d72c521df, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF