component
STD7NM80T4-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTD7NM80T4-VB
VBsemi Elec · MOSFETs · TO-252
STD7NM80T4-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGS is limited to ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the 800 V N-channel super junction MOSFET; continuous drain current is 5.9 A at TC = 100 °C. |
| 3 | S | passive | Source terminal, the reference for gate drive and the integral body diode, with reverse diode dV/dt rated at 32 V/ns. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | TC = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current | ID | 5.9 | A | TJ = 150 °C; VGS at 10 V; TC = 100 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | TC = 25 °C, unless otherwise noted | 1 | |
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s; 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 72 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 800 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage (N) | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ±30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Diode Forward Voltage | VSD | 1.4 | V | TJ = 25 °C, IS = 4 A, VGS = 0 V | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | -0.65 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.85 | Ω | VGS = 10 V, ID = 4 A | 2 | ||
| Forward Transconductance | gfs | 9 | S | VDS = 30 V, ID = 4 A | 2 | ||
| Input Capacitance | Ciss | 73 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Gate Input Resistance | Rg | 3.5 | Ω | f = 1 MHz, open drain | 2 | ||
| Reverse Recovery Charge | Qrr | 2.4 | μC | TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V | 2 |
CAD (KiCad official)
- Symbol:
STD7NM80T4-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
std7nm80t4-vb-etched.step/std7nm80t4-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std7nm80t4-vb.step/std7nm80t4-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
2f81d89d72c521df, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).