# STD5N95K3

**STMicroelectronics** · MOSFETs · DPAK

STD5N95K3 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input; ±30 V maximum gate-source voltage with integrated Zener diode protection rated to 30 V breakdown voltage. |
| 2 | D | passive | Drain terminal with heat sink tab connection; 950 V maximum drain-source voltage, 4 A maximum continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal; 4 A maximum continuous source-drain current with integrated back-to-back Zener diode protection to gate. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 4 | A | TC = 25 °C | 3 |
| Drain current (continuous) | ID |  |  | 3 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 16 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 90 | W | TC = 25 °C | 3 |
| Avalanche current, repetitive or not-repetitive | IAR |  |  | 4 | A | Pulse width limited by TJ max | 3 |
| Single pulse avalanche energy | EAS |  |  | 100 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 5 | V/ns | ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS | 3 |
| Operating junction temperature | TJ | -55 |  | 150 | °C |  | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal resistance junction-case max | Rthj-case |  |  | 1.39 | °C/W |  | 3 |
| Thermal resistance junction-ambient max | Rthj-amb |  |  | 62.5 | °C/W |  | 3 |
| Thermal resistance junction-pcb max | Rthj-pcb |  |  | 50 | °C/W | 1 inch² FR-4 board, 2 oz Cu | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 950 |  |  | V | ID = 1 mA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0, VDS = 950 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 50 | µA | VGS = 0, VDS = 950 V, TC = 125 °C | 4 |
| Gate-body leakage current | IGSS | -10 |  | 10 | µA | VDS = 0, VGS = ±20 V | 4 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 3 | 3.5 | Ω | VGS = 10 V, ID = 2 A | 4 |
| Source-drain current | ISD |  |  | 4 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 16 | A | Pulse width limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.6 | V | ISD = 4 A, VGS = 0 | 5 |
| Gate-source breakdown voltage | V(BR)GSO | 30 |  |  | V | IGS = ±1 mA, ID = 0 | 5 |
| Input capacitance | Ciss |  | 460 |  | pF | VDS = 25 V, f = 1 MHz, VGS = 0 | 4 |
| Output capacitance | Coss |  | 38 |  | pF |  | 4 |
| Reverse transfer capacitance | Crss |  | 1 |  | pF |  | 4 |
| Equivalent capacitance time related | Co(tr) |  | 970 |  | pF | VDS = 0 to 760 V, VGS = 0 | 4 |
| Equivalent capacitance energy related | Co(er) |  | 15 |  | pF | VDS = 0 to 760 V, VGS = 0 | 4 |
| Gate input resistance | Rg |  | 5.5 |  | Ω | f = 1 MHz, ID = 0 | 4 |
| Total gate charge | Qg |  | 19 |  | nC | VDD = 760 V, ID = 4 A, VGS = 10 V | 4 |
| Gate-source charge | Qgs |  | 4.7 |  | nC |  | 4 |
| Gate-drain charge | Qgd |  | 12 |  | nC |  | 4 |
| Turn-on delay time | td(on) |  | 17 |  | ns | VDD = 475 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V | 5 |
| Rise time | tr |  | 7 |  | ns |  | 5 |
| Turn-off-delay time | td(off) |  | 32 |  | ns |  | 5 |
| Fall time | tf |  | 18 |  | ns |  | 5 |
| Reverse recovery time | trr |  | 410 |  | ns | ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V | 5 |
| Reverse recovery charge | Qrr |  | 3.5 |  | µC |  | 5 |
| Reverse recovery current | IRRM |  | 17 |  | A |  | 5 |
| Reverse recovery time | trr |  | 516 |  | ns | ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 5 |
| Reverse recovery charge | Qrr |  | 4.1 |  | µC |  | 5 |
| Reverse recovery current | IRRM |  | 16 |  | A |  | 5 |

## CAD (KiCad official)

- Symbol: `STD5N95K3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std5n95k3-etched.step` / `std5n95k3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std5n95k3.step` / `std5n95k3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225853612392448) (23 pp, sha256 `06c2aa85fd7a5e5b`, retrieved 2026-09-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std5n95k3-datasheet.pdf)