component
STD5N95K3
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std5n95k3: specified limits as data (metadata.characteristics, 42 rows from the datasheet)
2 files changed
+560
README.md+49@@ -21,6 +21,55 @@ STD5N95K3 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -30 | | 30 | V | | 3 |+| Drain current (continuous) | ID | | | 4 | A | TC = 25 °C | 3 |+| Drain current (continuous) | ID | | | 3 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 16 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 90 | W | TC = 25 °C | 3 |+| Avalanche current, repetitive or not-repetitive | IAR | | | 4 | A | Pulse width limited by TJ max | 3 |+| Single pulse avalanche energy | EAS | | | 100 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 3 |+| Peak diode recovery voltage slope | dv/dt | | | 5 | V/ns | ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS | 3 |+| Operating junction temperature | TJ | -55 | | 150 | °C | | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Thermal resistance junction-case max | Rthj-case | | | 1.39 | °C/W | | 3 |+| Thermal resistance junction-ambient max | Rthj-amb | | | 62.5 | °C/W | | 3 |+| Thermal resistance junction-pcb max | Rthj-pcb | | | 50 | °C/W | 1 inch² FR-4 board, 2 oz Cu | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 950 | | | V | ID = 1 mA, VGS = 0 | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0, VDS = 950 V | 4 |+| Zero gate voltage drain current | IDSS | | | 50 | µA | VGS = 0, VDS = 950 V, TC = 125 °C | 4 |+| Gate-body leakage current | IGSS | -10 | | 10 | µA | VDS = 0, VGS = ±20 V | 4 |+| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 3 | 3.5 | Ω | VGS = 10 V, ID = 2 A | 4 |+| Source-drain current | ISD | | | 4 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 16 | A | Pulse width limited by safe operating area | 5 |+| Forward on voltage | VSD | | | 1.6 | V | ISD = 4 A, VGS = 0 | 5 |+| Gate-source breakdown voltage | V(BR)GSO | 30 | | | V | IGS = ±1 mA, ID = 0 | 5 |+| Input capacitance | Ciss | | 460 | | pF | VDS = 25 V, f = 1 MHz, VGS = 0 | 4 |+| Output capacitance | Coss | | 38 | | pF | | 4 |+| Reverse transfer capacitance | Crss | | 1 | | pF | | 4 |+| Equivalent capacitance time related | Co(tr) | | 970 | | pF | VDS = 0 to 760 V, VGS = 0 | 4 |+| Equivalent capacitance energy related | Co(er) | | 15 | | pF | VDS = 0 to 760 V, VGS = 0 | 4 |+| Gate input resistance | Rg | | 5.5 | | Ω | f = 1 MHz, ID = 0 | 4 |+| Total gate charge | Qg | | 19 | | nC | VDD = 760 V, ID = 4 A, VGS = 10 V | 4 |+| Gate-source charge | Qgs | | 4.7 | | nC | | 4 |+| Gate-drain charge | Qgd | | 12 | | nC | | 4 |+| Turn-on delay time | td(on) | | 17 | | ns | VDD = 475 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V | 5 |+| Rise time | tr | | 7 | | ns | | 5 |+| Turn-off-delay time | td(off) | | 32 | | ns | | 5 |+| Fall time | tf | | 18 | | ns | | 5 |+| Reverse recovery time | trr | | 410 | | ns | ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V | 5 |+| Reverse recovery charge | Qrr | | 3.5 | | µC | | 5 |+| Reverse recovery current | IRRM | | 17 | | A | | 5 |+| Reverse recovery time | trr | | 516 | | ns | ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C | 5 |+| Reverse recovery charge | Qrr | | 4.1 | | µC | | 5 |+| Reverse recovery current | IRRM | | 16 | | A | | 5 |+ ## CAD (KiCad official) - Symbol: `STD5N95K3`
page.json+511@@ -133,6 +133,517 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "06c2aa85fd7a5e5b",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not-repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Pulse width limited by TJ max",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case max",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.39,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient max",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-pcb max",+ "symbol": "Rthj-pcb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "1 inch² FR-4 board, 2 oz Cu",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 950,+ "typ": null,+ "max": null,+ "conditions": "ID = 1 mA, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0, VDS = 950 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0, VDS = 950 V, TC = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0, VGS = ±20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "VDS = VGS, ID = 100 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3,+ "max": 3.5,+ "conditions": "VGS = 10 V, ID = 2 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ISD = 4 A, VGS = 0",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-source breakdown voltage",+ "symbol": "V(BR)GSO",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IGS = ±1 mA, ID = 0",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 460,+ "max": null,+ "conditions": "VDS = 25 V, f = 1 MHz, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 38,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Equivalent capacitance time related",+ "symbol": "Co(tr)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 970,+ "max": null,+ "conditions": "VDS = 0 to 760 V, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Equivalent capacitance energy related",+ "symbol": "Co(er)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "VDS = 0 to 760 V, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate input resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 5.5,+ "max": null,+ "conditions": "f = 1 MHz, ID = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "VDD = 760 V, ID = 4 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.7,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "VDD = 475 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Turn-off-delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 410,+ "max": null,+ "conditions": "ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 3.5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 516,+ "max": null,+ "conditions": "ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 4.1,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],