component

STD4N62K3

Public Made by Adom

by adom

STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd4n62k3factory-2.0.0extractor-text

Verified STD4N62K3

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STD4N62K3 · DPAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 18-page datasheet
  • ✓distributor: lcsc C2970197, digikey 497-STD4N62K3TR-ND, mouser 511-STD4N62K3
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-oxh7u_61/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ std4n62k3.kicad_sym✓ std4n62k3.kicad_mod✓ std4n62k3.step
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STD4N62K3

STMicroelectronics · MOSFETs · DPAK

STD4N62K3 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MDmesh K3 MOSFET, with gate-source voltage rated at ±30 V in absolute maximum ratings.
2 D passive Drain, also connected to the TAB; continuous drain current is 3.8 A at TC = 25 °C with VDS rated at 620 V.
3 S passive Source of the MOSFET; pulsed drain current is rated at 15.2 A and the maximum junction temperature is not stated as a pin limit.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 620 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 3.8 A TC = 25 °C 2
Drain current (continuous) ID 2 A TC = 100 °C 2
Drain current (pulsed) IDM 15.2 A 2
Total power dissipation PTOT 70 W TC = 25 °C 2
Avalanche current, repetitive or not-repetitive IAR 3.8 A 2
Single pulse avalanche energy EAS 115 mJ 2
Gate-source human body model ESD ESD 2.5 kV R = 1.5 kΩ, C = 100 pF 2
Peak diode recovery voltage slope dv/dt 12 V/ns 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-to-case RthJC 1.79 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W When mounted on 1 inch2 FR-4, 2 Oz copper board 2
Drain-source breakdown voltage V(BR)DSS 620 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 620 V 3
Zero gate voltage drain current IDSS 50 µA VGS = 0 V, VDS = 620 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 50 µA 3
Static drain-source on-resistance RDS(on) 1.7 2 Ω VGS = 10 V, ID = 1.9 A 3
Intrinsic gate resistance RG 2 5 10 Ω f = 1 MHz, ID = 0 A 3
Source-drain current ISD 3.8 A 4
Source-drain current (pulsed) ISDM 15.2 A 4
Forward on voltage VSD 1.6 V ISD = 3.8 A, VGS = 0 V 4
Reverse recovery time trr 220 ns ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery charge Qrr 1.4 μC ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery current IRRM 13 A ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery time trr 270 ns ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery charge Qrr 1.9 μC ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery current IRRM 14 A ISD = 3.8 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4

CAD (KiCad official)

  • Symbol: STD4N62K3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std4n62k3-etched.step / std4n62k3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std4n62k3.step / std4n62k3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 b9e8f7e9c6169a22, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF