component
STD3NK60Z-1
Public Made by Adomby adom
STMicroelectronics MOSFETs, IPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTD3NK60Z-1
STMicroelectronics · MOSFETs · IPAK
STD3NK60Z-1 from STMicroelectronics, in a IPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected N-channel SuperMESH power MOSFET, with gate-source voltage limited to ±30 V and built-in back-to-back Zener protection. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 600 V drain-source voltage and 2.4 A continuous drain current at TC = 25 °C, with the TAB also connected to drain. |
| 3 | S | passive | Source of the N-channel MOSFET, with source-drain current limited to 2.4 A continuous and 9.6 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | IPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 3 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 50 µA | 3 |
| Static drain-source on resistance | RDS(on) | 3.2 | 3.6 | Ω | VGS = 10 V, ID = 1.2 A | 3 | |
| Gate-source breakdown voltage | V(BR)GSO | -30 | 30 | V | IGS = ±1 mA, ID = 0 A | 4 | |
| Source-drain current | ISD | 2.4 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 9.6 | A | 4 | |||
| Drain-source voltage | VDS | 600 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 2.4 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 1.51 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 9.6 | A | Pulse width limited by safe operating area | 2 | ||
| Total dissipation at TC = 25 °C | PTOT | 45 | W | TC = 25 °C | 2 | ||
| ESD gate-source human body model | ESD | 2.1 | kV | R = 1.5 kΩ, C = 100 pF | 2 | ||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | From all three leads to external heat-sink, t = 1 s, TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 2.4 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS | 2 | ||
| Operating junction temperature range | Tj | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not-repetitive | IAR | 2.4 | A | Pulse width limited by Tj max | 2 | ||
| Single pulse avalanche energy | EAS | 150 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |
CAD (KiCad official)
- Symbol:
STD3NK60Z-1 - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: IPAK (KiCad packages3D, STEP)
- 3D model files:
std3nk60z-1-etched.step/std3nk60z-1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std3nk60z-1.step/std3nk60z-1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (34 pp, sha256
55a910d3e7811f76, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).