STD3N95K5AG

{
  "schema_version": 1,
  "type": "component",
  "slug": "std3n95k5ag",
  "title": "STD3N95K5AG",
  "brief": "STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "std3n95k5ag",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "STD3N95K5AG",
    "manufacturer": "STMicroelectronics",
    "package": "DPAK",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590912067702366208",
    "parts": {
      "symbol": "std3n95k5ag.kicad_sym",
      "footprint": "std3n95k5ag.kicad_mod",
      "model_3d": "std3n95k5ag-hero.glb",
      "model_3d_plain": "std3n95k5ag.glb",
      "model_3d_step": "std3n95k5ag-etched.step",
      "model_3d_step_plain": "std3n95k5ag.step",
      "lbr": "std3n95k5ag.lbr"
    },
    "distributor_links": {
      "lcsc": "C672300",
      "digikey": "497-18736-2-ND",
      "mouser": "511-STD3N95K5AG"
    },
    "distributor_check": {
      "checked_at": "2026-10-11T01:37:58Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "497-18736-2-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "511-STD3N95K5AG",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the MOSFET, with gate-source voltage rated ±30 V (VGS) in the absolute maximum ratings."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, also connected to the TAB; rated for VDS of 950 V and 2 A continuous drain current at TC = 25 °C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the MOSFET; the source-drain diode is rated 2 A continuous and 3 A pulsed."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet gives no printed pin table for the DPAK. Pin numbers and functions come from the packa; The TAB is electrically the drain (D(2, TAB)) but is not a separately numbered pin, so it is listed ; Pin types (input for gate, passive for drain and source) are KiCad ERC classes chosen from the MOSFE"
        ],
        "pages_sent": 15,
        "cost_usd": 0.0366,
        "at": "2026-10-11T01:37:46"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590912067702366208",
        "pages": 15,
        "sha256": "80bddfb7f81c41f0",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "std3n95k5ag.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-11",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "std3n95k5ag-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "62917d03fdfb4dd86559b5008c42ae795c9076bc1849f272a1905595cb8977ad",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "DPAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "80bddfb7f81c41f0",
      "rows": [
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 25 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 100 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1.3,
          "conditions": "TC = 100 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current pulsed",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total power dissipation at TC = 25 °C",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 45,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4.5,
          "conditions": "ISD ≤ 2 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS ≤ 760 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature range",
          "symbol": "Tj",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 2.78,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-to-board",
          "symbol": "RthJB",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "When mounted on 1 inch² FR-4, 2 Oz copper board",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive or not repetitive",
          "symbol": "IAR",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "Pulse width limited by TJ max.",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "electrical",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 950,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 1 mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS = 950 V, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current (TC = 125 °C, defined by design)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS = 950 V, VGS = 0 V, TC = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VGS = ±20 V, VDS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 3,
          "typ": 4,
          "max": 5,
          "conditions": "VDS = VGS, ID = 100 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 4.3,
          "max": 5,
          "conditions": "VGS = 10 V, ID = 1 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current",
          "symbol": "ISD",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Source-drain current (pulsed)",
          "symbol": "ISDM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Forward on voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.5,
          "conditions": "ISD = 2 A, VGS = 0 V (pulsed: pulse duration = 300 µs, duty cycle 1.5%)",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "µC",
          "min": null,
          "typ": null,
          "max": 1.15,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery current",
          "symbol": "IRRM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 7.6,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery time (TJ = 150 °C)",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": null,
          "max": 525,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery charge (TJ = 150 °C)",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "µC",
          "min": null,
          "typ": null,
          "max": 1.9,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery current (TJ = 150 °C)",
          "symbol": "IRRM",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 7.2,
          "conditions": "ISD = 2 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-source breakdown voltage",
          "symbol": "V(BR)GSO",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "IGS = ±1 mA, ID = 0 A",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "std3n95k5ag"
  ],
  "discovery_pitch": "STD3N95K5AG (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "std3n95k5ag.kicad_sym",
    "std3n95k5ag.kicad_mod",
    "std3n95k5ag.glb",
    "std3n95k5ag.step",
    "std3n95k5ag.lbr",
    "docs/hero.png",
    "docs/std3n95k5ag-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "std3n95k5ag-hero.glb",
    "std3n95k5ag-hero.overlay.json"
  ],
  "visibility": {
    "public": true
  }
}