component
STD18N60M6
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STD18N60M6
STMicroelectronics · MOSFETs · DPAK
STD18N60M6 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated ±25 V (Table 1, absolute maximum ratings). |
| 2 | D | passive | Drain terminal, also electrically connected to the mounting tab (D(2, TAB)); the drain-source breakdown voltage V(BR)DSS is 600 V minimum at VGS = 0 V, ID = 1 mA (Table 4). |
| 3 | S | passive | Source terminal; the datasheet gives no pin-specific limit, and the source-drain diode current is rated 13 A continuous and 38 A pulsed (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STD18N60M6 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
std18n60m6-etched.step/std18n60m6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std18n60m6.step/std18n60m6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
46e964f9086b815b, retrieved 2026-10-11, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STD18N60M6
**STMicroelectronics** · MOSFETs · DPAK
STD18N60M6 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated ±25 V (Table 1, absolute maximum ratings). |
| 2 | D | passive | Drain terminal, also electrically connected to the mounting tab (D(2, TAB)); the drain-source breakdown voltage V(BR)DSS is 600 V minimum at VGS = 0 V, ID = 1 mA (Table 4). |
| 3 | S | passive | Source terminal; the datasheet gives no pin-specific limit, and the source-drain diode current is rated 13 A continuous and 38 A pulsed (Table 7). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STD18N60M6`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std18n60m6-etched.step` / `std18n60m6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std18n60m6.step` / `std18n60m6.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std18n60m6.pdf) (17 pp, sha256 `46e964f9086b815b`, retrieved 2026-10-11, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/std18n60m6-datasheet.pdf)