# STD105N10F7AG

**STMicroelectronics** · MOSFETs · DPAK

STD105N10F7AG from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-source voltage VGS rated at ±20 V (Table 2). |
| 2 | D | passive | Drain terminal, rated for 100 V drain-source voltage and 80 A continuous drain current at TC = 25 °C; it is also connected to the metal tab (D(2, TAB) in Figure 1). |
| 3 | S | passive | Source terminal; the source-drain diode is rated for 80 A continuous source-drain current (ISD) with a forward voltage of 1.2 V at ISD = 80 A and VGS = 0 V (Table 8). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 100 | V |  | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 80 | A | TC = 25 °C | 3 |
| Drain current (continuous) | ID |  |  | 62 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 320 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 120 | W | TC = 25 °C | 3 |
| Storage temperature range | Tstg | -55 |  | 175 | °C |  | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | ID = 250 μA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS = 100 V | 4 |
| Zero gate voltage drain current (TC = 125 °C) | IDSS |  |  | 100 | µA | VDS = 100 V, TC = 125 °C | 4 |
| Gate body leakage current | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 4 |
| Gate threshold voltage | VGS(th) | 2.5 |  | 4.5 | V | VDS = VGS, ID = 250 μA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 6.8 | 8 | mΩ | VGS = 10 V, ID = 40 A | 4 |
| Source-drain current | ISD |  |  | 80 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 320 | A |  | 5 |
| Thermal resistance junction-case | Rthj-case |  | 1.25 |  | °C/W |  | 3 |
| Thermal resistance junction-pcb | Rthj-pcb |  | 50 |  | °C/W | When mounted on FR-4 board of 1 inch², 2oz Cu | 3 |
| Single pulse avalanche energy | EAS |  | 400 |  | mJ | TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V | 3 |

## CAD (KiCad official)

- Symbol: `STD105N10F7AG`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std105n10f7ag-etched.step` / `std105n10f7ag-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std105n10f7ag.step` / `std105n10f7ag.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std105n10f7ag.pdf) (14 pp, sha256 `0c02e6d78b239f15`, retrieved 2026-10-11, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std105n10f7ag-datasheet.pdf)