component
STD105N10F7AG
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std105n10f7ag: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
2 files changed
+249−1
README.md+25@@ -21,6 +21,31 @@ STD105N10F7AG from STMicroelectronics, in a DPAK. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 100 | V | | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 3 |+| Drain current (continuous) | ID | | | 80 | A | TC = 25 °C | 3 |+| Drain current (continuous) | ID | | | 62 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 320 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 120 | W | TC = 25 °C | 3 |+| Storage temperature range | Tstg | -55 | | 175 | °C | | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | ID = 250 μA, VGS = 0 | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 100 V | 4 |+| Zero gate voltage drain current (TC = 125 °C) | IDSS | | | 100 | µA | VDS = 100 V, TC = 125 °C | 4 |+| Gate body leakage current | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 4 |+| Gate threshold voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250 μA | 4 |+| Static drain-source on-resistance | RDS(on) | | 6.8 | 8 | mΩ | VGS = 10 V, ID = 40 A | 4 |+| Source-drain current | ISD | | | 80 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 320 | A | | 5 |+| Thermal resistance junction-case | Rthj-case | | 1.25 | | °C/W | | 3 |+| Thermal resistance junction-pcb | Rthj-pcb | | 50 | | °C/W | When mounted on FR-4 board of 1 inch², 2oz Cu | 3 |+| Single pulse avalanche energy | EAS | | 400 | | mJ | TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V | 3 |+ ## CAD (KiCad official) - Symbol: `STD105N10F7AG`
page.json+224−1@@ -150,6 +150,229 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0c02e6d78b239f15",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 μA, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 100 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 100 V, TC = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS = ± 20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 4.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.8,+ "max": 8,+ "conditions": "VGS = 10 V, ID = 40 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.25,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-pcb",+ "symbol": "Rthj-pcb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "When mounted on FR-4 board of 1 inch², 2oz Cu",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": 400,+ "max": null,+ "conditions": "TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +414,4 @@ "visibility": { "public": true }-}+}