# STC6301D

**STANSON Tech** · MOSFETs · TO-252-4

STC6301D from STANSON Tech, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60V VDSS, 23.0A continuous drain current at TA=25C). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with absolute maximum VGSS of ±20V and threshold of 1.0V min to 2.5V max. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60V VDSS, -18.0A continuous drain current at TA=25C). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with absolute maximum VGSS of ±20V and threshold of -1.0V to -2.5V. |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, which are tied together internally. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDSS |  |  | 60 | V | Ta = 25℃ | 2 |
| Drain-Source Voltage (P-channel) | VDSS |  |  | -60 | V | Ta = 25℃ | 2 |
| Gate-Source Voltage (N-channel) | VGSS | -20 |  | 20 | V | Ta = 25℃ | 2 |
| Gate-Source Voltage (P-channel) | VGSS | -20 |  | 20 | V | Ta = 25℃ | 2 |
| Continuous Drain Current (N-channel) | ID |  |  | 23 | A | TA=25℃ | 2 |
| Continuous Drain Current (P-channel) | ID |  |  | -18 | A | TA=25℃ | 2 |
| Continuous Drain Current (N-channel) | ID |  |  | 15 | A | TA=70℃ | 2 |
| Continuous Drain Current (P-channel) | ID |  |  | -11 | A | TA=70℃ | 2 |
| Pulsed Drain Current (N-channel) | IDM |  |  | 46 | A |  | 2 |
| Pulsed Drain Current (P-channel) | IDM |  |  | -36 | A |  | 2 |
| Continuous Source Current (Diode Conduction) (N-channel) | IS |  |  | 59 | A |  | 2 |
| Continuous Source Current (Diode Conduction) (P-channel) | IS |  |  | -50 | A |  | 2 |
| Power Dissipation (N-channel) | PD |  |  | 34.7 | W | TA=25℃ | 2 |
| Power Dissipation (P-channel) | PD |  |  | 34.7 | W | TA=25℃ | 2 |
| Operation Junction Temperature | TJ |  |  | 150 | ℃ |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction to Ambient (N-channel) | RθJA |  |  | 85 | ℃/W |  | 2 |
| Thermal Resistance Junction to Ambient (P-channel) | RθJA |  |  | 85 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=10mA | 3 |
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -60 |  |  | V | VGS=0V, ID=-10mA | 3 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 |  | 2.5 | V | VDS=VGS, ID=250 uA | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 |  | -2.5 | V | VDS=VGS, ID=-250uA | 3 |
| Gate Leakage Current (N-channel) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Gate Leakage Current (P-channel) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS |  |  | 1 | uA | TJ=25℃, VDS=48V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS |  |  | -1 | uA | TJ=25℃, VDS=-48V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS |  |  | 5 | uA | TJ=55℃, VDS=32V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS |  |  | -5 | uA | TJ=55℃, VDS=-32V, VGS=0V | 3 |
| Drain-Source On-Resistance (N-channel) | RDS(on) |  | 0.037 | 0.045 | Ω | VGS=10V, ID=8.0A | 3 |
| Drain-Source On-Resistance (P-channel) | RDS(on) |  | 0.046 | 0.06 | Ω | VGS=-10V, ID=-5.0A | 3 |
| Drain-Source On-Resistance (N-channel) | RDS(on) |  | 0.028 | 0.037 | Ω | VGS=4.5V, ID=5.0A | 3 |
| Drain-Source On-Resistance (P-channel) | RDS(on) |  | 0.065 | 0.09 | Ω | VGS=-4.5V, ID=-3.0 A | 3 |
| Diode Forward Voltage (N-channel) | VSD |  |  | 1.2 | V | IS=1.0A, VGS=0V | 3 |
| Diode Forward Voltage (P-channel) | VSD |  |  | -1.2 | V | IS=-1.0A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `STC6301D`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `stc6301d-etched.step` / `stc6301d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stc6301d.step` / `stc6301d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STANSON Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911638925742081) (8 pp, sha256 `78a5840e13e8476b`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stc6301d-datasheet.pdf)