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STC6301D

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STANSON Tech MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers stc6301d: viewers · Ray 24d ago
package.json stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md stc6301d: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 18d ago
stc6301d-etched.glb stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
stc6301d-etched.step stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
stc6301d-hero.glb stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
stc6301d-hero.overlay.json stc6301d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
stc6301d.glb Publish 0.1.0 · Ray 24d ago
stc6301d.kicad_mod Publish 0.1.0 · Ray 24d ago
stc6301d.kicad_sym Publish 0.1.0 · Ray 24d ago
stc6301d.lbr Publish 0.1.0 · Ray 24d ago
stc6301d.step Publish 0.1.0 · Ray 24d ago

STC6301D

STANSON Tech · MOSFETs · TO-252-4

STC6301D from STANSON Tech, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60V VDSS, 23.0A continuous drain current at TA=25C).
2 G1 input Gate of the N-channel MOSFET, with absolute maximum VGSS of ±20V and threshold of 1.0V min to 2.5V max.
3 S2 passive Source of the P-channel MOSFET (-60V VDSS, -18.0A continuous drain current at TA=25C).
4 G2 input Gate of the P-channel MOSFET, with absolute maximum VGSS of ±20V and threshold of -1.0V to -2.5V.
5 D1/D2 passive Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, which are tied together internally.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package TO-252-4
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDSS 60 V Ta = 25℃ 2
Drain-Source Voltage (P-channel) VDSS -60 V Ta = 25℃ 2
Gate-Source Voltage (N-channel) VGSS -20 20 V Ta = 25℃ 2
Gate-Source Voltage (P-channel) VGSS -20 20 V Ta = 25℃ 2
Continuous Drain Current (N-channel) ID 23 A TA=25℃ 2
Continuous Drain Current (P-channel) ID -18 A TA=25℃ 2
Continuous Drain Current (N-channel) ID 15 A TA=70℃ 2
Continuous Drain Current (P-channel) ID -11 A TA=70℃ 2
Pulsed Drain Current (N-channel) IDM 46 A 2
Pulsed Drain Current (P-channel) IDM -36 A 2
Continuous Source Current (Diode Conduction) (N-channel) IS 59 A 2
Continuous Source Current (Diode Conduction) (P-channel) IS -50 A 2
Power Dissipation (N-channel) PD 34.7 W TA=25℃ 2
Power Dissipation (P-channel) PD 34.7 W TA=25℃ 2
Operation Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance Junction to Ambient (N-channel) RθJA 85 ℃/W 2
Thermal Resistance Junction to Ambient (P-channel) RθJA 85 ℃/W 2
Drain-Source Breakdown Voltage (N-channel) V(BR)DSS 60 V VGS=0V, ID=10mA 3
Drain-Source Breakdown Voltage (P-channel) V(BR)DSS -60 V VGS=0V, ID=-10mA 3
Gate Threshold Voltage (N-channel) VGS(th) 1 2.5 V VDS=VGS, ID=250 uA 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -2.5 V VDS=VGS, ID=-250uA 3
Gate Leakage Current (N-channel) IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Leakage Current (P-channel) IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 1 uA TJ=25℃, VDS=48V, VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 uA TJ=25℃, VDS=-48V, VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 uA TJ=55℃, VDS=32V, VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -5 uA TJ=55℃, VDS=-32V, VGS=0V 3
Drain-Source On-Resistance (N-channel) RDS(on) 0.037 0.045 Ω VGS=10V, ID=8.0A 3
Drain-Source On-Resistance (P-channel) RDS(on) 0.046 0.06 Ω VGS=-10V, ID=-5.0A 3
Drain-Source On-Resistance (N-channel) RDS(on) 0.028 0.037 Ω VGS=4.5V, ID=5.0A 3
Drain-Source On-Resistance (P-channel) RDS(on) 0.065 0.09 Ω VGS=-4.5V, ID=-3.0 A 3
Diode Forward Voltage (N-channel) VSD 1.2 V IS=1.0A, VGS=0V 3
Diode Forward Voltage (P-channel) VSD -1.2 V IS=-1.0A, VGS=0V 3

CAD (KiCad official)

  • Symbol: STC6301D
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4 (KiCad packages3D, STEP)
  • 3D model files: stc6301d-etched.step / stc6301d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stc6301d.step / stc6301d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (8 pp, sha256 78a5840e13e8476b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF