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STB8NM60T4

Public Made by Adom

by adom

STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
viewers stb8nm60t4: viewers · Ray 24d ago
package.json stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
page.json stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
README.md stb8nm60t4: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 17d ago
stb8nm60t4-etched.glb stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb8nm60t4-etched.step stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb8nm60t4-hero.glb stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb8nm60t4-hero.overlay.json stb8nm60t4: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb8nm60t4.glb Publish 0.1.0 · Ray 24d ago
stb8nm60t4.kicad_mod Publish 0.1.0 · Ray 24d ago
stb8nm60t4.kicad_sym Publish 0.1.0 · Ray 24d ago
stb8nm60t4.lbr Publish 0.1.0 · Ray 24d ago
stb8nm60t4.step Publish 0.1.0 · Ray 24d ago

STB8NM60T4

STMicroelectronics · MOSFETs · D2PAK

STB8NM60T4 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±30 V (absolute maximum).
2 D passive Drain terminal, also connected to the TAB; rated for 600 V drain-source breakdown (V(BR)DSS) and 8 A continuous drain current at TC = 25 °C.
3 S passive Source terminal; source-drain diode is rated for 8 A continuous and 32 A pulsed source-drain current.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 8 A TC = 25 °C 2
Drain current (continuous) ID 5 A TC = 100 °C 2
Drain current (pulsed) IDM 32 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 100 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 8 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS 2
Storage temperature range Tstg -55 150 °C 2
Avalanche current, repetitive or non-repetitive IAS 2.5 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 200 mJ Starting TJ = 25 °C, ID = IAS, VDD = 50 V 2
Thermal resistance, junction-to-case RthJC 1.25 °C/W 2
Thermal resistance, junction-to-ambient RthJA 35 °C/W When mounted on 1 inch2 FR-4, 2 Oz copper board 2
Drain-source breakdown voltage V(BR)DSS 600 V ID = 250 μA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 3
Zero gate voltage drain current IDSS 10 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) 3
Gate body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 3
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 0.9 1 Ω VGS = 10 V, ID = 2.5 A 3
Source-drain current ISD 8 A 4
Source-drain current (pulsed) ISDM 32 A 4
Forward on voltage VSD 1.5 V ISD = 5 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STB8NM60T4
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stb8nm60t4-etched.step / stb8nm60t4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb8nm60t4.step / stb8nm60t4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 315833c24bba8539, retrieved 2026-10-09, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF