component

STB6N60M2

Public Made by Adom

by adom

STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstb6n60m2factory-2.0.0extractor-text

Verified STB6N60M2

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STB6N60M2 · D2PAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 20-page datasheet
  • ✓distributor: lcsc C2971698, digikey 497-13934-2-ND, mouser 511-STB6N60M2
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-8kkkko68/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stb6n60m2.kicad_sym✓ stb6n60m2.kicad_mod✓ stb6n60m2.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers stb6n60m2: viewers · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
stb6n60m2-etched.glb Publish 0.1.0 · Ray 5d ago
stb6n60m2-etched.step stb6n60m2: factory component page (tier=mfr) · Ray 5d ago
stb6n60m2-hero.glb stb6n60m2: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
stb6n60m2-hero.overlay.json Publish 0.1.0 · Ray 5d ago
stb6n60m2.glb Publish 0.1.0 · Ray 5d ago
stb6n60m2.kicad_mod Publish 0.1.0 · Ray 5d ago
stb6n60m2.kicad_sym Publish 0.1.0 · Ray 5d ago
stb6n60m2.lbr Publish 0.1.0 · Ray 5d ago
stb6n60m2.step Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 5d ago

STB6N60M2

STMicroelectronics · MOSFETs · D2PAK

STB6N60M2 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage VGS is limited to ±25 V.
2 D passive Drain of the N-channel MOSFET; drain-source voltage VDS is rated 600 V.
3 S passive Source of the N-channel MOSFET; continuous source-drain current ISD is rated 4.5 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 600 V 2
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) ID 4.5 A TC = 25 °C 2
Drain current (continuous) ID 2.9 A TC = 100 °C 2
Drain current (pulsed) IDM 18 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 60 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 4.5 A, di/dt ≤ 400 A/μs, VDD = 400 V 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDD = 480 V 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-to-case RthJC 2.08 °C/W Junction-to-case 2
Thermal resistance, junction-to-ambient RthJA 30 °C/W Junction-to-ambient, D2PAK, mounted on 1 inch² FR-4 PCB with 2-oz copper 2
Avalanche current, repetitive or not-repetitive IAR 1 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 86 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 600 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 3
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±25 V 3
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 1.06 1.2 Ω VGS = 10 V, ID = 2.25 A 3
Input capacitance Ciss 232 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 3
Output capacitance Coss 14 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 3
Reverse transfer capacitance Crss 0.7 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 3
Equivalent capacitance time related Coss eq. 71 pF VDS = 0 to 480 V, VGS = 0 V 3
Total gate charge Qg 8.2 nC VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V 3
Gate-source charge Qgs 1.7 nC VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V 3
Gate-drain charge Qgd 4.2 nC VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V 3
Intrinsic gate resistance Rg 6.5 Ω f = 1 MHz, ID = 0 A 3
Turn-on delay time td(on) 9.5 ns VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V 3
Rise time tr 7.4 ns VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V 3
Turn-off delay time td(off) 24 ns VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V 3
Fall time tf 22.5 ns VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V 3
Source-drain current ISD 4.5 A 4
Source-drain current (pulsed) ISDM 18 A 4
Forward on voltage VSD 1.6 V ISD = 4.5 A, VGS = 0 V 4
Reverse recovery time trr 274 ns ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery charge Qrr 1.47 μC ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery current IRRM 10.7 A ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V 4
Reverse recovery time trr 376 ns ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery charge Qrr 1.96 μC ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4
Reverse recovery current IRRM 10.5 A ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C 4

CAD (KiCad official)

  • Symbol: STB6N60M2
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stb6n60m2-etched.step / stb6n60m2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb6n60m2.step / stb6n60m2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (20 pp, sha256 948329775d799763, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF