STB6N60M2 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET; gate-source voltage VGS is limited to ±25 V.
2	D	passive	Drain of the N-channel MOSFET; drain-source voltage VDS is rated 600 V.
3	S	passive	Source of the N-channel MOSFET; continuous source-drain current ISD is rated 4.5 A.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	D2PAK
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			600	V		2
Gate-source voltage	VGS	-25		25	V		2
Drain current (continuous)	ID			4.5	A	TC = 25 °C	2
Drain current (continuous)	ID			2.9	A	TC = 100 °C	2
Drain current (pulsed)	IDM			18	A	Pulse width limited by safe operating area	2
Total power dissipation	PTOT			60	W	TC = 25 °C	2
Peak diode recovery voltage slope	dv/dt			15	V/ns	ISD ≤ 4.5 A, di/dt ≤ 400 A/μs, VDD = 400 V	2
MOSFET dv/dt ruggedness	dv/dt			50	V/ns	VDD = 480 V	2
Storage temperature range	Tstg	-55		150	°C		2
Thermal resistance, junction-to-case	RthJC			2.08	°C/W	Junction-to-case	2
Thermal resistance, junction-to-ambient	RthJA			30	°C/W	Junction-to-ambient, D2PAK, mounted on 1 inch² FR-4 PCB with 2-oz copper	2
Avalanche current, repetitive or not-repetitive	IAR			1	A	Pulse width limited by TJ max.	2
Single pulse avalanche energy	EAS			86	mJ	Starting TJ = 25 °C, ID = IAR, VDD = 50 V	2
Drain-source breakdown voltage	V(BR)DSS	600			V	ID = 1 mA, VGS = 0 V	3
Zero gate voltage drain current	IDSS			1	µA	VGS = 0 V, VDS = 600 V	3
Zero gate voltage drain current	IDSS			100	µA	VGS = 0 V, VDS = 600 V, TC = 125 °C	3
Gate body leakage current	IGSS	-10		10	µA	VDS = 0 V, VGS = ±25 V	3
Gate threshold voltage	VGS(th)	2	3	4	V	VDS = VGS, ID = 250 µA	3
Static drain-source on-resistance	RDS(on)		1.06	1.2	Ω	VGS = 10 V, ID = 2.25 A	3
Input capacitance	Ciss		232		pF	VDS = 100 V, f = 1 MHz, VGS = 0 V	3
Output capacitance	Coss		14		pF	VDS = 100 V, f = 1 MHz, VGS = 0 V	3
Reverse transfer capacitance	Crss		0.7		pF	VDS = 100 V, f = 1 MHz, VGS = 0 V	3
Equivalent capacitance time related	Coss eq.		71		pF	VDS = 0 to 480 V, VGS = 0 V	3
Total gate charge	Qg		8.2		nC	VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V	3
Gate-source charge	Qgs		1.7		nC	VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V	3
Gate-drain charge	Qgd		4.2		nC	VDD = 480 V, ID = 4.5 A, VGS = 0 to 10 V	3
Intrinsic gate resistance	Rg		6.5		Ω	f = 1 MHz, ID = 0 A	3
Turn-on delay time	td(on)		9.5		ns	VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V	3
Rise time	tr		7.4		ns	VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V	3
Turn-off delay time	td(off)		24		ns	VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V	3
Fall time	tf		22.5		ns	VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V	3
Source-drain current	ISD			4.5	A		4
Source-drain current (pulsed)	ISDM			18	A		4
Forward on voltage	VSD			1.6	V	ISD = 4.5 A, VGS = 0 V	4
Reverse recovery time	trr		274		ns	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery charge	Qrr		1.47		μC	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery current	IRRM		10.7		A	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery time	trr		376		ns	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery charge	Qrr		1.96		μC	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery current	IRRM		10.5		A	ISD = 4.5 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4

CAD (KiCad official)

Symbol: STB6N60M2
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: D2PAK (KiCad packages3D, STEP)
3D model files: stb6n60m2-etched.step / stb6n60m2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb6n60m2.step / stb6n60m2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (20 pp, sha256 948329775d799763, retrieved 2026-11-02, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

STB6N60M2

Verified STB6N60M2

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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