component
STB28NM50N
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STB28NM50N
STMicroelectronics · MOSFETs · D2PAK
STB28NM50N from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives a maximum gate-source voltage of ±25 V (VGS). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated 500 V drain-source voltage (VDS) and 21 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated for a 21 A continuous source-drain current and 84 A pulsed source-drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STB28NM50N - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
stb28nm50n-etched.step/stb28nm50n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stb28nm50n.step/stb28nm50n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
4dec8558901dd3c4, retrieved 2026-10-08, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STB28NM50N
**STMicroelectronics** · MOSFETs · D2PAK
STB28NM50N from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives a maximum gate-source voltage of ±25 V (VGS). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated 500 V drain-source voltage (VDS) and 21 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated for a 21 A continuous source-drain current and 84 A pulsed source-drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STB28NM50N`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files: `stb28nm50n-etched.step` / `stb28nm50n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stb28nm50n.step` / `stb28nm50n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stb28nm50n.pdf) (22 pp, sha256 `4dec8558901dd3c4`, retrieved 2026-10-08, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stb28nm50n-datasheet.pdf)