component
STB28NM50N
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
README.mdadded+39@@ -0,0 +1,39 @@+# STB28NM50N++**STMicroelectronics** · MOSFETs · D2PAK++STB28NM50N from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives a maximum gate-source voltage of ±25 V (VGS). |+| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated 500 V drain-source voltage (VDS) and 21 A continuous drain current at TC = 25 °C. |+| 3 | S | passive | Source terminal of the N-channel MOSFET, rated for a 21 A continuous source-drain current and 84 A pulsed source-drain current. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | D2PAK |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STB28NM50N`+- Footprint: `Package_TO_SOT_SMD:TO-263-2`+- 3D model: D2PAK (KiCad packages3D, STEP)+- 3D model files: `stb28nm50n-etched.step` / `stb28nm50n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stb28nm50n.step` / `stb28nm50n.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stb28nm50n.pdf) (22 pp, sha256 `4dec8558901dd3c4`, retrieved 2026-10-08, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/stb28nm50n-datasheet.pdf)
page.jsonadded+171@@ -0,0 +1,171 @@+{+ "slug": "stb28nm50n",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "stb28nm50n",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "stb28nm50n.kicad_sym",+ "stb28nm50n.kicad_mod",+ "stb28nm50n.glb",+ "stb28nm50n.step",+ "stb28nm50n.lbr",+ "docs/hero.png",+ "docs/stb28nm50n-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "stb28nm50n-hero.glb",+ "stb28nm50n-hero.overlay.json"+ ],+ "component": {+ "mpn": "STB28NM50N",+ "manufacturer": "STMicroelectronics",+ "package": "D2PAK",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://www.st.com/resource/en/datasheet/stb28nm50n.pdf",+ "parts": {+ "symbol": "stb28nm50n.kicad_sym",+ "footprint": "stb28nm50n.kicad_mod",+ "model_3d": "stb28nm50n-hero.glb",+ "model_3d_plain": "stb28nm50n.glb",+ "model_3d_step": "stb28nm50n-etched.step",+ "model_3d_step_plain": "stb28nm50n.step",+ "lbr": "stb28nm50n.lbr"+ },+ "distributor_links": {+ "lcsc": "C2965242",+ "digikey": "497-STB28NM50NTR-ND",+ "mouser": "511-STB28NM50N"+ },+ "distributor_check": {+ "checked_at": "2026-10-08T02:43:14Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "497-STB28NM50NTR-ND",+ "status": "found",+ "lifecycle": "Active"+ },+ "mouser": {+ "pn": "511-STB28NM50N",+ "status": "found"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate terminal of the N-channel MOSFET; the datasheet gives a maximum gate-source voltage of ±25 V (VGS)."+ },+ {+ "number": "2",+ "name": "D",+ "type": "passive",+ "description": "Drain terminal of the N-channel MOSFET, rated 500 V drain-source voltage (VDS) and 21 A continuous drain current at TC = 25 °C."+ },+ {+ "number": "3",+ "name": "S",+ "type": "passive",+ "description": "Source terminal of the N-channel MOSFET, rated for a 21 A continuous source-drain current and 84 A pulsed source-drain current."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-5-5",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: The datasheet has no explicit D2PAK pin table. The pin assignment (1=G, 2=D, 3=S, TAB=D) comes from ; The TAB is not a numbered pin in the datasheet. It is listed as 'TAB' in the symbol annotation and i",+ "dropped thermal pad ['EP'] absent from footprint"+ ],+ "pages_sent": 22,+ "cost_usd": 0.0514,+ "at": "2026-10-08T02:42:59"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/stb28nm50n.pdf",+ "pages": 22,+ "sha256": "4dec8558901dd3c4",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ },+ "models_3d": [+ {+ "file": "stb28nm50n.step",+ "role": "plain",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 15,+ 10,+ 4.42+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "804a3f76e4182a02567b2429bdc9a585b857158fb8543fccd29c8eb6780e1310",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ },+ {+ "file": "stb28nm50n-etched.step",+ "role": "eda",+ "up": "Z",+ "units": "mm",+ "origin": "footprint origin = pad-pattern centre",+ "seat": "z = 0",+ "extents_mm": [+ 15,+ 10,+ 4.42+ ],+ "zmin_mm": 0,+ "centre_offset_mm": 0,+ "footprint_binding": "identity",+ "sha256": "56c3d2210bdb4bceff018801544a676f7e399172392d61589c3d7fa02fc75213",+ "checked": "2026-10-08",+ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+ }+ ]+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}