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ST25DV64KC-IE8T3

STMicroelectronics · RF Chips · TSSOP-8

ST25DV64KC-IE8T3 from STMicroelectronics, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 V_EH power_out Energy harvesting analog output pin used to power external components.
2 AC0 passive Antenna coil connection AC0 for the RF interface.
3 AC1 passive Antenna coil connection AC1 for the RF interface.
4 VSS power_in Ground reference for the device.
5 SDA bidirectional Serial data I/O of the two-wire I2C interface (up to 1 MHz protocol).
6 SCL input Serial clock input of the two-wire I2C interface.
7 GPO output Interrupt output, open-drain on this IE version; it is released (high impedance) when not driven and needs an external pull-up.
8 VCC power_in Supply voltage input; the device operates from a single supply of 1.8 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TSSOP-8
Category Radio Frequency Chip/Antenna
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Ambient operating temperature (RF interface, SO8N/TSSOP8) TA -40 105 °C Range 8; SO8N, TSSOP; RF interface 141
Ambient operating temperature (I2C interface, SO8N/TSSOP8) TA -40 125 °C Range 8; SO8N, TSSOP; I2C interface 141
Storage temperature TSTG -65 150 °C UFDFPN8, SO8N, TSSOP8, UFDFPN12, WLCSP10 141
I2C input or output range VIO -0.5 6.5 V 141
I2C supply voltage VCC -0.5 6.5 V 141
DC output current on pin SDA (when equal to 0) IOL_MAX_SDA 5 mA when equal to 0 141
DC output current on pin GPO (when equal to 0) IOL_MAX_GPO 1.5 mA when equal to 0 141
RF input voltage amplitude peak to peak between AC0 and AC1 VMAX_1 11 V VAC0 - VAC1; VSS pin left floating 141
AC voltage between AC0 and VSS, or AC1 and VSS VMAX_2 -0.5 5.5 V VAC0 - VSS, or VAC1 - VSS 141
Electrostatic discharge voltage (human body model) VESD 2000 V All pins 141
Supply voltage (I2C operating conditions) VCC 1.8 5.5 V I2C operating conditions 142
Ambient operating temperature (I2C operating conditions) TA -40 125 °C Range 8; SO8N, TSSOP8 142
Input capacitance (SDA) CIN 8 pF Input capacitance (SDA) 142
Input capacitance (other pins) CIN 6 pF Input capacitance (other pins) 142
Pulse width ignored (input filter on SCL and SDA) tNS 80 ns Pulse width ignored (input filter on SCL and SDA) 142
Input leakage current (SCL, SDA) ILI -0.1 0.03 0.1 µA VIN = VSS or VCC, device in Standby mode 144
Operating supply current read (device select E2 address) ICC_E2 126 180 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current read (device select E2 address) ICC_E2 230 260 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current read (device select E2 address) ICC_E2 510 550 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current write (device select E2 address) ICC0 120 220 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current write (device select E2 address) ICC0 120 230 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current write (device select E2 address) ICC0 140 260 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current write (device select MB address) ICC0_MB 180 220 µA VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) 144
Operating supply current write (device select MB address) ICC0_MB 290 320 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) 145
Operating supply current write (device select MB address) ICC0_MB 520 600 µA VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) 145
Low power down supply current ICC1 2.5 5 µA LPD = 1; VCC = 1.8 V 145
Low power down supply current ICC1 3 6 µA LPD = 1; VCC = 3.3 V 145
Low power down supply current ICC1 4 7 µA LPD = 1; VCC = 5.5 V 145
Static standby supply current after power ON or device select stop or time out ICC1_PON 78 110 µA LPD = 0; VCC = 1.8 V 145
Static standby supply current after power ON or device select stop or time out ICC1_PON 82 110 µA LPD = 0; VCC = 3.3 V 145
Static standby supply current after power ON or device select stop or time out ICC1_PON 95 130 µA LPD = 0; VCC = 5.5 V 145
Input low voltage (SDA, SCL) VIL -0.45 V VCC = 1.8 V 145
Input low voltage (LPD) VIL_LPD -0.45 V VCC = 3.3 V 145
Output low voltage SDA (1 MHz) VOL_SDA 0.05 0.4 V IOL = 1 mA, VCC = 1.8 V 145
Output low voltage SDA (1 MHz) VOL_SDA 0.08 0.4 V IOL = 2.1 mA, VCC = 3.3 V 145
Output low voltage SDA (1 MHz) VOL_SDA 0.1 0.4 V IOL = 3 mA, VCC = 5.5 V 145
Device select acknowledge (VCC power-up) VCC_Power_up 1.48 1.7 V fC = 100 KHz 145
Clock frequency fC 0.05 1000 kHz Test conditions specified in Table 246 147
Clock pulse width high tCHCL 0.26 25000 µs Test conditions specified in Table 246; tCHCL timeout 147
Clock pulse width low tCLCH 0.5 25000 µs Test conditions specified in Table 246; tCLCH timeout 147
I2C timeout on Start condition tSTART_OUT 35 ms Test conditions specified in Table 246 147
Clock low to next data valid (access time) tCLQV 450 ns Test conditions specified in Table 246 147
Start condition hold time tDLCL 0.25 35000 µs Test conditions specified in Table 246; tDLCL timeout 147
I2C write time tW 5.5 ms Test conditions specified in Table 246 147
Power-up boot time (RF OFF) tboot_LPD 0.6 ms RF OFF 147
Output low voltage (GPO open drain) VOL_GPO_OD 0.28 0.4 V IOL = 1 mA, VCC = 1.8 V 149
Output low voltage (GPO open drain) VOL_GPO_OD 0.22 0.4 V IOL = 1 mA, VCC = 3.3 V 149
Output low voltage (GPO open drain) VOL_GPO_OD 0.21 0.4 V IOL = 1 mA, VCC = 5.5 V 149
Output leakage current (GPO open drain) IL_GPO_OD -0.15 0.06 0.15 µA GPO in Hi-Z, external voltage applied on GPO, VSS or VCC 149
External RF signal frequency fCC 13.553 13.56 13.567 MHz 150
Operating field according to ISO H_ISO 150 5000 mA/m Range 8 TA = -40 °C to 105 °C 150
10% carrier modulation index MICARRIER 10 30 % MI=(A-B)/(A+B); 150 mA/m > H_ISO > 1000 mA/m 150
100% carrier modulation index MICARRIER 95 100 % MI=(A-B)/(A+B) 150
Minimum time from carrier generation to first data tMIN CD 1 ms From H-field min 150
Time for ST25DVxxKC response t1 318.6 320.9 323.3 µs 4352/FC 150
RF OFF time (chip reset) tRF_OFF 2 ms Chip reset 150
Internal tuning capacitor CTUN 28.5 pF f = 13.56 MHz 150
Thermal resistance junction-ambient, TSSOP8 3 x 6.4 mm package ƟJA 255 °C/W TSSOP8 3 x 6.4 mm, 0.65 mm pitch; JEDEC JESD51-7 2s2p board 151

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Grey color indicates the states where power is delivered on V_EH pin. 50

CAD (KiCad official)

  • Symbol: ST25DV64KC-IE8T3
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: st25dv64kc-ie8t3-etched.step / st25dv64kc-ie8t3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); st25dv64kc-ie8t3.step / st25dv64kc-ie8t3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (203 pp, sha256 aaa637577efb1a5d, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF