component

SSTA28MGT116

Public Made by Adom

by adom

ROHM Semicon Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsssta28mgt116factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ssta28mgt116 / README.md
History Download
Ray Publish 0.1.0 3bf0be9 16d ago

SSTA28MGT116

ROHM Semicon · Darlington Transistors · SOT-23

SSTA28MGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the NPN Darlington transistor; VEBO max 12 V and IC max 300 mA.
2 Base passive Base of the NPN Darlington transistor; emitter-base breakdown BVEBO min 12 V at IE = 10 µA.
3 Collector passive Collector of the NPN Darlington transistor; VCES and VCBO max 80 V, IC max 300 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 80 V Ta = 25°C 2
Collector-emitter voltage VCES 80 V Ta = 25°C 2
Emitter-base voltage VEBO 12 V Ta = 25°C 2
Collector current IC 300 mA Ta = 25°C 2
Power dissipation PD 200 mW Each terminal mounted on a reference land (footnote *1), Ta = 25°C 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Range of storage temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage BVCBO 80 V IC = 100μA 2
Collector-emitter breakdown voltage BVCES 80 V IC = 100μA 2
Emitter-base breakdown voltage BVEBO 12 V IE = 10μA 2
Collector cut-off current ICBO 100 nA VCB = 60V 2
Collector cut-off current ICES 500 nA VCE = 10V 2
Emitter cut-off current IEBO 100 nA VEB = 10V 2
Collector-emitter saturation voltage VCE(sat)1 0.7 1.2 V IC = 10mA, IB = 10μA 2
Collector-emitter saturation voltage VCE(sat)2 0.8 1.5 V IC = 100mA, IB = 100μA 2
Base-emitter turn on voltage VBE(on) 1.4 2 V VCE = 5V, IC = 100mA 2
Transition frequency fT 125 200 MHz VCE = 5V, IE = -10mA, f = 100MHz 2
Output capacitance Cob 5 8 pF VCB = 10V, IE = 0A, f = 1MHz 2

CAD (KiCad official)

  • Symbol: SSTA28MGT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ssta28mgt116-etched.step / ssta28mgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssta28mgt116.step / ssta28mgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 11818b504a8ffe81, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF