component
SSTA28MGT116
Public Made by Adomby adom
ROHM Semicon Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| ssta28mgt116-etched.glb | 16d ago |
| ssta28mgt116-etched.step | 16d ago |
| ssta28mgt116-hero.glb | 16d ago |
| ssta28mgt116-hero.overlay.json | 16d ago |
| ssta28mgt116.glb | 16d ago |
| ssta28mgt116.kicad_mod | 16d ago |
| ssta28mgt116.kicad_sym | 16d ago |
| ssta28mgt116.lbr | 16d ago |
| ssta28mgt116.step | 16d ago |
SSTA28MGT116
ROHM Semicon · Darlington Transistors · SOT-23
SSTA28MGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the NPN Darlington transistor; VEBO max 12 V and IC max 300 mA. |
| 2 | Base | passive | Base of the NPN Darlington transistor; emitter-base breakdown BVEBO min 12 V at IE = 10 µA. |
| 3 | Collector | passive | Collector of the NPN Darlington transistor; VCES and VCBO max 80 V, IC max 300 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 80 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCES | 80 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | 12 | V | Ta = 25°C | 2 | ||
| Collector current | IC | 300 | mA | Ta = 25°C | 2 | ||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land (footnote *1), Ta = 25°C | 2 | ||
| Junction temperature | Tj | 150 | ℃ | Ta = 25°C | 2 | ||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | BVCBO | 80 | V | IC = 100μA | 2 | ||
| Collector-emitter breakdown voltage | BVCES | 80 | V | IC = 100μA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 12 | V | IE = 10μA | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 60V | 2 | ||
| Collector cut-off current | ICES | 500 | nA | VCE = 10V | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 10V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | 0.7 | 1.2 | V | IC = 10mA, IB = 10μA | 2 | |
| Collector-emitter saturation voltage | VCE(sat)2 | 0.8 | 1.5 | V | IC = 100mA, IB = 100μA | 2 | |
| Base-emitter turn on voltage | VBE(on) | 1.4 | 2 | V | VCE = 5V, IC = 100mA | 2 | |
| Transition frequency | fT | 125 | 200 | MHz | VCE = 5V, IE = -10mA, f = 100MHz | 2 | |
| Output capacitance | Cob | 5 | 8 | pF | VCB = 10V, IE = 0A, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
SSTA28MGT116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ssta28mgt116-etched.step/ssta28mgt116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssta28mgt116.step/ssta28mgt116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (8 pp, sha256
11818b504a8ffe81, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).