component
SSM6L09FU
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TOSHIBA MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM6L09FU
TOSHIBA · MOSFETs · SOT-363
SSM6L09FU from TOSHIBA, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE 1 | passive | Source of Q1 (N-channel MOSFET, VDSS 30 V, ID 400 mA DC). |
| 2 | GATE 1 | input | Gate of Q1 (N-channel), VGSS ±20 V, Vth 1.1 to 1.8 V. |
| 3 | DRAIN 2 | passive | Drain of Q2 (P-channel MOSFET, VDSS −30 V, ID −200 mA DC). |
| 4 | SOURCE 2 | passive | Source of Q2 (P-channel MOSFET). |
| 5 | GATE 2 | input | Gate of Q2 (P-channel), VGSS ±20 V, Vth −1.1 to −1.8 V. |
| 6 | DRAIN 1 | passive | Drain of Q1 (N-channel MOSFET, VDSS 30 V, ID 400 mA DC). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source voltage | VDSS | 30 | V | Ta = 25°C | 1 | ||
| Q1 Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Q1 DC drain current | ID | 400 | mA | DC, Ta = 25°C | 1 | ||
| Q1 Pulse drain current | IDP | 800 | mA | Pulse, Ta = 25°C | 1 | ||
| Q2 Drain-Source voltage | VDSS | -30 | V | Ta = 25°C | 1 | ||
| Q2 Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Q2 DC drain current | ID | -200 | mA | DC, Ta = 25°C | 1 | ||
| Q2 Pulse drain current | IDP | -400 | mA | Pulse, Ta = 25°C | 1 | ||
| Power dissipation (Q1, Q2 common) | PD | 300 | mW | Note 1: total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32 mm2 × 6) | 1 | ||
| Channel temperature (Q1, Q2 common) | Tch | 150 | °C | 1 | |||
| Storage temperature range (Q1, Q2 common) | Tstg | -55 | 150 | °C | 1 | ||
| Q1 Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±16 V, VDS = 0 | 3 | |
| Q1 Drain-Source breakdown voltage | V(BR)DSS | 30 | V | ID = 1 mA, VGS = 0 | 3 | ||
| Q1 Drain cut-off current | IDSS | 1 | μA | VDS = 30 V, VGS = 0 | 3 | ||
| Q1 Gate threshold voltage | Vth | 1.1 | 1.8 | V | VDS = 5 V, ID = 0.1 mA | 3 | |
| Q1 Forward transfer admittance | /Yfs/ | 270 | mS | VDS = 5 V, ID = 200 mA (Note2) | 3 | ||
| Q1 Drain-Source on-resistance | RDS(ON) | 0.5 | 0.7 | Ω | ID = 200 mA, VGS = 10 V (Note2) | 3 | |
| Q1 Drain-Source on-resistance | RDS(ON) | 0.8 | 1.2 | Ω | ID = 200 mA, VGS = 4 V (Note2) | 3 | |
| Q1 Drain-Source on-resistance | RDS(ON) | 1 | 1.7 | Ω | ID = 200 mA, VGS = 3.3 V (Note2) | 3 | |
| Q2 Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±16 V, VDS = 0 | 4 | |
| Q2 Drain-Source breakdown voltage | V(BR)DSS | -30 | V | ID = −1 mA, VGS = 0 | 4 | ||
| Q2 Drain cut-off current | IDSS | -1 | μA | VDS = −30 V, VGS = 0 | 4 | ||
| Q2 Gate threshold voltage | Vth | -1.1 | -1.8 | V | VDS = −5 V, ID = −0.1 mA | 4 | |
| Q2 Forward transfer admittance | /Yfs/ | 115 | mS | VDS = −5 V, ID = −100 mA (Note3) | 4 | ||
| Q2 Drain-Source on-resistance | RDS(ON) | 2.1 | 2.7 | Ω | ID = −100 mA, VGS = −10 V (Note3) | 4 | |
| Q2 Drain-Source on-resistance | RDS(ON) | 3.3 | 4.2 | Ω | ID = −100 mA, VGS = −4 V (Note3) | 4 | |
| Q2 Drain-Source on-resistance | RDS(ON) | 4 | 6 | Ω | ID = −100 mA, VGS = −3.3 V (Note3) | 4 |
CAD (KiCad official)
- Symbol:
SSM6L09FU - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
ssm6l09fu-etched.step/ssm6l09fu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm6l09fu.step/ssm6l09fu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
6c9872d517b6a798, retrieved 2026-11-04, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM6L09FU
**TOSHIBA** · MOSFETs · SOT-363
SSM6L09FU from TOSHIBA, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE 1 | passive | Source of Q1 (N-channel MOSFET, VDSS 30 V, ID 400 mA DC). |
| 2 | GATE 1 | input | Gate of Q1 (N-channel), VGSS ±20 V, Vth 1.1 to 1.8 V. |
| 3 | DRAIN 2 | passive | Drain of Q2 (P-channel MOSFET, VDSS −30 V, ID −200 mA DC). |
| 4 | SOURCE 2 | passive | Source of Q2 (P-channel MOSFET). |
| 5 | GATE 2 | input | Gate of Q2 (P-channel), VGSS ±20 V, Vth −1.1 to −1.8 V. |
| 6 | DRAIN 1 | passive | Drain of Q1 (N-channel MOSFET, VDSS 30 V, ID 400 mA DC). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source voltage | VDSS | | | 30 | V | Ta = 25°C | 1 |
| Q1 Gate-Source voltage | VGSS | -20 | | 20 | V | Ta = 25°C | 1 |
| Q1 DC drain current | ID | | | 400 | mA | DC, Ta = 25°C | 1 |
| Q1 Pulse drain current | IDP | | | 800 | mA | Pulse, Ta = 25°C | 1 |
| Q2 Drain-Source voltage | VDSS | | | -30 | V | Ta = 25°C | 1 |
| Q2 Gate-Source voltage | VGSS | -20 | | 20 | V | Ta = 25°C | 1 |
| Q2 DC drain current | ID | | | -200 | mA | DC, Ta = 25°C | 1 |
| Q2 Pulse drain current | IDP | | | -400 | mA | Pulse, Ta = 25°C | 1 |
| Power dissipation (Q1, Q2 common) | PD | | | 300 | mW | Note 1: total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32 mm2 × 6) | 1 |
| Channel temperature (Q1, Q2 common) | Tch | | | 150 | °C | | 1 |
| Storage temperature range (Q1, Q2 common) | Tstg | -55 | | 150 | °C | | 1 |
| Q1 Gate leakage current | IGSS | -1 | | 1 | μA | VGS = ±16 V, VDS = 0 | 3 |
| Q1 Drain-Source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 1 mA, VGS = 0 | 3 |
| Q1 Drain cut-off current | IDSS | | | 1 | μA | VDS = 30 V, VGS = 0 | 3 |
| Q1 Gate threshold voltage | Vth | 1.1 | | 1.8 | V | VDS = 5 V, ID = 0.1 mA | 3 |
| Q1 Forward transfer admittance | /Yfs/ | 270 | | | mS | VDS = 5 V, ID = 200 mA (Note2) | 3 |
| Q1 Drain-Source on-resistance | RDS(ON) | | 0.5 | 0.7 | Ω | ID = 200 mA, VGS = 10 V (Note2) | 3 |
| Q1 Drain-Source on-resistance | RDS(ON) | | 0.8 | 1.2 | Ω | ID = 200 mA, VGS = 4 V (Note2) | 3 |
| Q1 Drain-Source on-resistance | RDS(ON) | | 1 | 1.7 | Ω | ID = 200 mA, VGS = 3.3 V (Note2) | 3 |
| Q2 Gate leakage current | IGSS | -1 | | 1 | μA | VGS = ±16 V, VDS = 0 | 4 |
| Q2 Drain-Source breakdown voltage | V(BR)DSS | -30 | | | V | ID = −1 mA, VGS = 0 | 4 |
| Q2 Drain cut-off current | IDSS | | | -1 | μA | VDS = −30 V, VGS = 0 | 4 |
| Q2 Gate threshold voltage | Vth | -1.1 | | -1.8 | V | VDS = −5 V, ID = −0.1 mA | 4 |
| Q2 Forward transfer admittance | /Yfs/ | 115 | | | mS | VDS = −5 V, ID = −100 mA (Note3) | 4 |
| Q2 Drain-Source on-resistance | RDS(ON) | | 2.1 | 2.7 | Ω | ID = −100 mA, VGS = −10 V (Note3) | 4 |
| Q2 Drain-Source on-resistance | RDS(ON) | | 3.3 | 4.2 | Ω | ID = −100 mA, VGS = −4 V (Note3) | 4 |
| Q2 Drain-Source on-resistance | RDS(ON) | | 4 | 6 | Ω | ID = −100 mA, VGS = −3.3 V (Note3) | 4 |
## CAD (KiCad official)
- Symbol: `SSM6L09FU`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `ssm6l09fu-etched.step` / `ssm6l09fu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm6l09fu.step` / `ssm6l09fu.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/ssm6l09fu-datasheet.pdf) (9 pp, sha256 `6c9872d517b6a798`, retrieved 2026-11-04, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm6l09fu-datasheet.pdf)