component
SSM6K818R
Public Made by Adomby adom
TOSHIBA MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM6K818R
TOSHIBA · MOSFETs · TSOP-6
SSM6K818R from TOSHIBA, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 2, 5 and 6. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 5 and 6. |
| 3 | Gate | input | Gate terminal with VGSS rating of ±20 V and gate threshold voltage of 1.1 to 2.1 V at ID = 0.1 mA. |
| 4 | Source | passive | Source terminal of the N-channel MOSFET, with continuous drain current rating of 15 A. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 6. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = +20 / -16 V | 3 | |
| Drain cut-off current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | 27 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 1.1 | 2.1 | V | VDS = 10 V, ID = 0.1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 8 | 12 | mΩ | ID = 4 A, VGS = 4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 6.5 | 8.9 | mΩ | ID = 4 A, VGS = 10 V | 3 | |
| Diode forward voltage | VDSF | -0.85 | -1.2 | V | ID = -15 A, VGS = 0 V | 4 | |
| Drain-source voltage | VDSS | 30 | V | Ta = 25 °C | 2 | ||
| Gate-source voltage | VGSS | -20 | 20 | V | Ta = 25 °C; +20 V/-16 V ensured at DC, -20 V at pulse (duty 5 %) | 2 | |
| Drain current (DC) | ID | 15 | A | Ta = 25 °C | 2 | ||
| Drain current (pulsed) | IDP | 50 | A | Ta = 25 °C | 2 | ||
| Single-pulse avalanche energy | EAS | 46.2 | mJ | VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω | 2 | ||
| Single-pulse avalanche current | IAS | 6.8 | A | VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Input capacitance | Ciss | 1130 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 52 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Output capacitance | Coss | 350 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Switching time (turn-on time) | ton | 28 | ns | VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω | 3 | ||
| Switching time (turn-off time) | toff | 33 | ns | VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω | 3 | ||
| Total gate charge | Qg | 7.5 | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 | ||
| Gate-source charge 1 | Qgs1 | 3 | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 | ||
| Gate-drain charge | Qgd | 2.2 | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 |
CAD (KiCad official)
- Symbol:
SSM6K818R - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
ssm6k818r-etched.step/ssm6k818r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm6k818r.step/ssm6k818r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
451365f6da182fdc, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM6K818R
**TOSHIBA** · MOSFETs · TSOP-6
SSM6K818R from TOSHIBA, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 2, 5 and 6. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 5 and 6. |
| 3 | Gate | input | Gate terminal with VGSS rating of ±20 V and gate threshold voltage of 1.1 to 2.1 V at ID = 0.1 mA. |
| 4 | Source | passive | Source terminal of the N-channel MOSFET, with continuous drain current rating of 15 A. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 6. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 5. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = +20 / -16 V | 3 |
| Drain cut-off current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | 27 | | | V | ID = 10 mA, VGS = -20 V | 3 |
| Gate threshold voltage | Vth | 1.1 | | 2.1 | V | VDS = 10 V, ID = 0.1 mA | 3 |
| Drain-source on-resistance | RDS(ON) | | 8 | 12 | mΩ | ID = 4 A, VGS = 4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) | | 6.5 | 8.9 | mΩ | ID = 4 A, VGS = 10 V | 3 |
| Diode forward voltage | VDSF | | -0.85 | -1.2 | V | ID = -15 A, VGS = 0 V | 4 |
| Drain-source voltage | VDSS | | | 30 | V | Ta = 25 °C | 2 |
| Gate-source voltage | VGSS | -20 | | 20 | V | Ta = 25 °C; +20 V/-16 V ensured at DC, -20 V at pulse (duty 5 %) | 2 |
| Drain current (DC) | ID | | | 15 | A | Ta = 25 °C | 2 |
| Drain current (pulsed) | IDP | | | 50 | A | Ta = 25 °C | 2 |
| Single-pulse avalanche energy | EAS | | | 46.2 | mJ | VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω | 2 |
| Single-pulse avalanche current | IAS | | | 6.8 | A | VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω | 2 |
| Channel temperature | Tch | | | 150 | °C | | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Input capacitance | Ciss | | 1130 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 52 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 |
| Output capacitance | Coss | | 350 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 3 |
| Switching time (turn-on time) | ton | | 28 | | ns | VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω | 3 |
| Switching time (turn-off time) | toff | | 33 | | ns | VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω | 3 |
| Total gate charge | Qg | | 7.5 | | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 |
| Gate-source charge 1 | Qgs1 | | 3 | | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 |
| Gate-drain charge | Qgd | | 2.2 | | nC | VDD = 15 V, ID = 15 A, VGS = 4.5 V | 3 |
## CAD (KiCad official)
- Symbol: `SSM6K818R`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `ssm6k818r-etched.step` / `ssm6k818r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm6k818r.step` / `ssm6k818r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/ssm6k818r-datasheet.pdf) (9 pp, sha256 `451365f6da182fdc`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm6k818r-datasheet.pdf)