component

SSM6K818R

Public Made by Adom

by adom

TOSHIBA MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM6K818R

TOSHIBA · MOSFETs · TSOP-6

SSM6K818R from TOSHIBA, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 2, 5 and 6.
2 Drain passive Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 5 and 6.
3 Gate input Gate terminal with VGSS rating of ±20 V and gate threshold voltage of 1.1 to 2.1 V at ID = 0.1 mA.
4 Source passive Source terminal of the N-channel MOSFET, with continuous drain current rating of 15 A.
5 Drain passive Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 6.
6 Drain passive Drain terminal of the N-channel MOSFET (VDSS 30 V), connected internally with pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -100 100 nA VDS = 0 V, VGS = +20 / -16 V 3
Drain cut-off current IDSS 1 µA VDS = 30 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 30 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 27 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 1.1 2.1 V VDS = 10 V, ID = 0.1 mA 3
Drain-source on-resistance RDS(ON) 8 12 mΩ ID = 4 A, VGS = 4.5 V 3
Drain-source on-resistance RDS(ON) 6.5 8.9 mΩ ID = 4 A, VGS = 10 V 3
Diode forward voltage VDSF -0.85 -1.2 V ID = -15 A, VGS = 0 V 4
Drain-source voltage VDSS 30 V Ta = 25 °C 2
Gate-source voltage VGSS -20 20 V Ta = 25 °C; +20 V/-16 V ensured at DC, -20 V at pulse (duty 5 %) 2
Drain current (DC) ID 15 A Ta = 25 °C 2
Drain current (pulsed) IDP 50 A Ta = 25 °C 2
Single-pulse avalanche energy EAS 46.2 mJ VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω 2
Single-pulse avalanche current IAS 6.8 A VDD = 24 V, Tch = 25 °C (initial), L = 1 mH, RG = 25 Ω 2
Channel temperature Tch 150 °C 2
Storage temperature Tstg -55 150 °C 2
Input capacitance Ciss 1130 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 52 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 350 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 3
Switching time (turn-on time) ton 28 ns VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω 3
Switching time (turn-off time) toff 33 ns VDD = 15 V, ID = 1.0 A, VGS = 0 to 4.5 V, RG = 30 Ω 3
Total gate charge Qg 7.5 nC VDD = 15 V, ID = 15 A, VGS = 4.5 V 3
Gate-source charge 1 Qgs1 3 nC VDD = 15 V, ID = 15 A, VGS = 4.5 V 3
Gate-drain charge Qgd 2.2 nC VDD = 15 V, ID = 15 A, VGS = 4.5 V 3

CAD (KiCad official)

  • Symbol: SSM6K818R
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ssm6k818r-etched.step / ssm6k818r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm6k818r.step / ssm6k818r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 451365f6da182fdc, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF