# SSM3K56CT

**TOSHIBA** · MOSFETs · SOT-883

SSM3K56CT from TOSHIBA, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage rated ±8 V max, with 1.5-V gate drive and Vth of 0.4 to 1.0 V at ID = 1 mA. |
| 2 | Source | passive | Source terminal; the body diode forward voltage is -1.2 V max at ID = -800 mA. |
| 3 | Drain | passive | Drain terminal; drain-source voltage rated 20 V max, DC drain current 800 mA and pulsed 1600 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-883 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 20 | V |  | 1 |
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 1 |
| Drain current (DC) | ID |  |  | 800 | mA |  | 1 |
| Drain current (pulsed) | IDP |  |  | 1600 | mA | Pulse width (PW) ≤ 10 ms, duty ≤ 1% (Note 2) | 1 |
| Power dissipation | PD |  |  | 500 | mW | Mounted on FR4 board, 25.4 mm × 25.4 mm × 1.6 mm, Cu pad 645 mm2 (Note 3) | 1 |
| Channel temperature | Tch |  |  | 150 | °C | Ensure channel temperature does not exceed 150 (Note 1) | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±6 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 1 | µA | VDS = 16 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | ID = 1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (VGS = -5 V mode) | V(BR)DSX | 15 |  |  | V | ID = 1 mA, VGS = -5 V | 3 |
| Gate threshold voltage | Vth | 0.4 |  | 1 | V | VDS = 3 V, ID = 1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 186 | 235 | mΩ | ID = 800 mA, VGS = 4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 230 | 300 | mΩ | ID = 600 mA, VGS = 2.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 290 | 480 | mΩ | ID = 200 mA, VGS = 1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 360 | 840 | mΩ | ID = 50 mA, VGS = 1.5 V | 3 |
| Diode forward voltage | VDSF |  | -0.82 | -1.2 | V | ID = -800 mA, VGS = 0 V (pulse measurement) | 4 |

## CAD (KiCad official)

- Symbol: `SSM3K56CT`
- Footprint: `Package_TO_SOT_SMD:SOT-883`
- 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `ssm3k56ct-etched.step` / `ssm3k56ct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3k56ct.step` / `ssm3k56ct.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](docs/ssm3k56ct-datasheet.pdf) (8 pp, sha256 `fbf80a9f39455ed4`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3k56ct-datasheet.pdf)