component

SSM3K56CT

Public Made by Adom

by adom

TOSHIBA MOSFETs, SOT-883. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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SSM3K56CT

TOSHIBA · MOSFETs · SOT-883

SSM3K56CT from TOSHIBA, in a SOT-883. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage rated ±8 V max, with 1.5-V gate drive and Vth of 0.4 to 1.0 V at ID = 1 mA.
2 Source passive Source terminal; the body diode forward voltage is -1.2 V max at ID = -800 mA.
3 Drain passive Drain terminal; drain-source voltage rated 20 V max, DC drain current 800 mA and pulsed 1600 mA.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-883
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 20 V 1
Gate-source voltage VGSS -8 8 V 1
Drain current (DC) ID 800 mA 1
Drain current (pulsed) IDP 1600 mA Pulse width (PW) ≤ 10 ms, duty ≤ 1% (Note 2) 1
Power dissipation PD 500 mW Mounted on FR4 board, 25.4 mm × 25.4 mm × 1.6 mm, Cu pad 645 mm2 (Note 3) 1
Channel temperature Tch 150 °C Ensure channel temperature does not exceed 150 (Note 1) 1
Storage temperature Tstg -55 150 °C 1
Gate leakage current IGSS -1 1 µA VGS = ±6 V, VDS = 0 V 3
Drain cut-off current IDSS 1 µA VDS = 16 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 20 V ID = 1 mA, VGS = 0 V 3
Drain-source breakdown voltage (VGS = -5 V mode) V(BR)DSX 15 V ID = 1 mA, VGS = -5 V 3
Gate threshold voltage Vth 0.4 1 V VDS = 3 V, ID = 1 mA 3
Drain-source on-resistance RDS(ON) 186 235 mΩ ID = 800 mA, VGS = 4.5 V 3
Drain-source on-resistance RDS(ON) 230 300 mΩ ID = 600 mA, VGS = 2.5 V 3
Drain-source on-resistance RDS(ON) 290 480 mΩ ID = 200 mA, VGS = 1.8 V 3
Drain-source on-resistance RDS(ON) 360 840 mΩ ID = 50 mA, VGS = 1.5 V 3
Diode forward voltage VDSF -0.82 -1.2 V ID = -800 mA, VGS = 0 V (pulse measurement) 4

CAD (KiCad official)

  • Symbol: SSM3K56CT
  • Footprint: Package_TO_SOT_SMD:SOT-883
  • 3D model: SOT-883, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 1.45 mm nominal SOT height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: ssm3k56ct-etched.step / ssm3k56ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3k56ct.step / ssm3k56ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 fbf80a9f39455ed4, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF