# SSM3K344R

**TOSHIBA** · MOSFETs · SOT-23F

SSM3K344R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±8 V (VGSS absolute maximum rating). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, the reference for VGS and the drain current path; the device is sensitive to electrostatic discharge. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is limited to 20 V (VDSS absolute maximum rating). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | ID = 1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (VGS reverse bias mode) | V(BR)DSX | 15 |  |  | V | ID = 1 mA, VGS = -5 V | 3 |
| Drain cut-off current | IDSS |  |  | 1 | µA | VDS = 10 V, VGS = 0 V | 3 |
| Gate leakage current | IGSS | -10 |  | 10 | µA | VGS = ±8 V, VGS = 0 V | 3 |
| Gate threshold voltage | Vth | 0.4 |  | 1 | V | VDS = 3 V, ID = 1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 102 | 232 | mΩ | ID = 0.5 A, VGS = 1.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 81 | 139 | mΩ | ID = 0.5 A, VGS = 1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 63 | 91 | mΩ | ID = 1.0 A, VGS = 2.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 51 | 71 | mΩ | ID = 3.0 A, VGS = 4.5 V | 3 |
| Diode forward voltage | VDSF |  | -0.8 | -1.2 | V | ID = -3.0 A, VGS = 0 V | 4 |
| Drain-source voltage | VDSS |  |  | 20 | V |  | 2 |
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 2 |
| Channel temperature | Tch |  |  | 150 | °C | Ensure channel temperature does not exceed 150 °C (Note 1) | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |

## CAD (KiCad official)

- Symbol: `SSM3K344R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files: `ssm3k344r-etched.step` / `ssm3k344r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3k344r.step` / `ssm3k344r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881785647849472) (9 pp, sha256 `df519c6c3ad619fb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3k344r-datasheet.pdf)