component
SSM3K344R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSSM3K344R
TOSHIBA · MOSFETs · SOT-23F
SSM3K344R from TOSHIBA, in a SOT-23F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±8 V (VGSS absolute maximum rating). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, the reference for VGS and the drain current path; the device is sensitive to electrostatic discharge. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is limited to 20 V (VDSS absolute maximum rating). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS reverse bias mode) | V(BR)DSX | 15 | V | ID = 1 mA, VGS = -5 V | 3 | ||
| Drain cut-off current | IDSS | 1 | µA | VDS = 10 V, VGS = 0 V | 3 | ||
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = ±8 V, VGS = 0 V | 3 | |
| Gate threshold voltage | Vth | 0.4 | 1 | V | VDS = 3 V, ID = 1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 102 | 232 | mΩ | ID = 0.5 A, VGS = 1.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 81 | 139 | mΩ | ID = 0.5 A, VGS = 1.8 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 63 | 91 | mΩ | ID = 1.0 A, VGS = 2.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 51 | 71 | mΩ | ID = 3.0 A, VGS = 4.5 V | 3 | |
| Diode forward voltage | VDSF | -0.8 | -1.2 | V | ID = -3.0 A, VGS = 0 V | 4 | |
| Drain-source voltage | VDSS | 20 | V | 2 | |||
| Gate-source voltage | VGSS | -8 | 8 | V | 2 | ||
| Channel temperature | Tch | 150 | °C | Ensure channel temperature does not exceed 150 °C (Note 1) | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SSM3K344R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23F (KiCad packages3D, STEP)
- 3D model files:
ssm3k344r-etched.step/ssm3k344r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k344r.step/ssm3k344r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
df519c6c3ad619fb, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).