main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers ssm3j372r: viewers · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago
ssm3j372r-etched.glb Publish 0.1.0 · Ray 23d ago
ssm3j372r-etched.step ssm3j372r: factory component page (tier=lcsc) · Ray 23d ago
ssm3j372r-hero.glb ssm3j372r: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
ssm3j372r-hero.overlay.json Publish 0.1.0 · Ray 23d ago
ssm3j372r.glb Publish 0.1.0 · Ray 23d ago
ssm3j372r.kicad_mod Publish 0.1.0 · Ray 23d ago
ssm3j372r.kicad_sym Publish 0.1.0 · Ray 23d ago
ssm3j372r.lbr Publish 0.1.0 · Ray 23d ago
ssm3j372r.step Publish 0.1.0 · Ray 23d ago

SSM3J372R

TOSHIBA · MOSFETs · SOT-23-3

SSM3J372R from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the absolute maximum gate-source voltage is -12/+6 V, and the device is specified for 1.8-V gate drive.
2 Source passive Source terminal; the body diode forward voltage VDSF is 1.2 V max at ID = 6.0 A and VGS = 0 V.
3 Drain passive Drain terminal; the drain-source voltage rating is -30 V and the DC drain current rating is -6.0 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = -10/+6 V, VDS = 0 V 3
Drain cut-off current IDSS -1 µA VDS = -30 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -30 V ID = -10 mA, VGS = 0 V 3
Drain-source breakdown voltage (V(BR)DSX mode) V(BR)DSX -22 V ID = -10 mA, VGS = 8 V 3
Gate threshold voltage Vth -0.5 -1.2 V VDS = -3 V, ID = -1 mA 3
Drain-source on-resistance RDS(ON) 36 42 mΩ ID = -5.0 A, VGS = -10 V 3
Drain-source on-resistance RDS(ON) 42.5 50 mΩ ID = -4.0 A, VGS = -4.5 V 3
Drain-source on-resistance RDS(ON) 57.5 72 mΩ ID = -2.5 A, VGS = -2.5 V 3
Drain-source on-resistance RDS(ON) 76.5 144 mΩ ID = -0.5 A, VGS = -1.8 V 3
Forward transfer admittance /Yfs/ 5.7 11.3 S VDS = -3 V, ID = -2.5 A 3
Diode forward voltage VDSF 0.9 1.2 V ID = 6.0 A, VGS = 0 V 4
Drain-source voltage VDSS -30 V Ta = 25 °C 2
Gate-source voltage VGSS -12 6 V Ta = 25 °C 2
Drain current (DC) ID -6 A Ta = 25 °C 2
Drain current (pulsed) IDP -24 A Note 2: Pulse width ≤ 1 ms, duty ≤ 1% 2
Channel temperature Tch 150 °C Note 1: channel temperature must not exceed 150 °C 2
Storage temperature Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: SSM3J372R
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: ssm3j372r-etched.step / ssm3j372r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j372r.step / ssm3j372r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 2c8a62929d95f437, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF