component
SSM3J372R
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J372R
TOSHIBA · MOSFETs · SOT-23-3
SSM3J372R from TOSHIBA, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the absolute maximum gate-source voltage is -12/+6 V, and the device is specified for 1.8-V gate drive. |
| 2 | Source | passive | Source terminal; the body diode forward voltage VDSF is 1.2 V max at ID = 6.0 A and VGS = 0 V. |
| 3 | Drain | passive | Drain terminal; the drain-source voltage rating is -30 V and the DC drain current rating is -6.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = -10/+6 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | ID = -10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (V(BR)DSX mode) | V(BR)DSX | -22 | V | ID = -10 mA, VGS = 8 V | 3 | ||
| Gate threshold voltage | Vth | -0.5 | -1.2 | V | VDS = -3 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 36 | 42 | mΩ | ID = -5.0 A, VGS = -10 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 42.5 | 50 | mΩ | ID = -4.0 A, VGS = -4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 57.5 | 72 | mΩ | ID = -2.5 A, VGS = -2.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 76.5 | 144 | mΩ | ID = -0.5 A, VGS = -1.8 V | 3 | |
| Forward transfer admittance | /Yfs/ | 5.7 | 11.3 | S | VDS = -3 V, ID = -2.5 A | 3 | |
| Diode forward voltage | VDSF | 0.9 | 1.2 | V | ID = 6.0 A, VGS = 0 V | 4 | |
| Drain-source voltage | VDSS | -30 | V | Ta = 25 °C | 2 | ||
| Gate-source voltage | VGSS | -12 | 6 | V | Ta = 25 °C | 2 | |
| Drain current (DC) | ID | -6 | A | Ta = 25 °C | 2 | ||
| Drain current (pulsed) | IDP | -24 | A | Note 2: Pulse width ≤ 1 ms, duty ≤ 1% | 2 | ||
| Channel temperature | Tch | 150 | °C | Note 1: channel temperature must not exceed 150 °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SSM3J372R - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ssm3j372r-etched.step/ssm3j372r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j372r.step/ssm3j372r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
2c8a62929d95f437, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).