# SSM3J353F

**TOSHIBA** · MOSFETs · TO-236-3(SOT-23-3)

SSM3J353F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET; the gate-source voltage is rated -25 V / +20 V (VGSS) absolute maximum. |
| 2 | Source | passive | Source of the P-channel MOSFET; the drain-source voltage is rated -30 V (VDSS) absolute maximum, with VGS referenced to this pin. |
| 3 | Drain | passive | Drain of the P-channel MOSFET; the DC drain current is rated -2.0 A and the pulsed drain current -4.0 A absolute maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | -30 | V |  | 2 |
| Gate-source voltage | VGSS | -25 |  | 20 | V |  | 2 |
| Drain current (DC) | ID |  |  | -2 | A |  | 2 |
| Drain current (pulsed) | IDP |  |  | -4 | A |  | 2 |
| Power dissipation | PD |  |  | 600 | mW | (Note 3) | 2 |
| Power dissipation | PD |  |  | 1200 | mW | t ≤ 1s (Note 1) | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±16 V | 3 |
| Drain cut-off current | IDSS |  |  | -1 | µA | VDS = -30 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -30 |  |  | V | ID = -1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | -22 |  |  | V | ID = -1 mA, VGS = 8 V | 3 |
| Gate threshold voltage | Vth | -1 |  | -2.2 | V | VDS = VGS, ID = -0.25 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 198 | 274 | mΩ | ID = -0.5 A, VGS = -4.0 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 176 | 232 | mΩ | ID = -0.5 A, VGS = -4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 125 | 150 | mΩ | ID = -2.0 A, VGS = -10 V | 3 |
| Diode forward voltage | VDSF |  | 0.9 | 1.2 | V | ID = 2.0 A, VGS = 0 V | 3 |

## CAD (KiCad official)

- Symbol: `SSM3J353F`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files: `ssm3j353f-etched.step` / `ssm3j353f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j353f.step` / `ssm3j353f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600799605114626048) (9 pp, sha256 `08bcdaa51097b3c2`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j353f-datasheet.pdf)